Measurement of Minority Carrier Recombination Lifetime in Silicon Wafers by Measurement of Photoconductivity Decay by Microwave Reflectance: Result of Round Robin Test

2009 ◽  
pp. 347-347-20 ◽  
Author(s):  
M Miyazaki ◽  
K Kawai ◽  
M Ichimura
Keyword(s):  
Minority Carrier ◽  
Round Robin ◽  
Silicon Wafers ◽  
Round Robin Test ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Photoconductivity Decay

Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay

2005 ◽  
Vol 483-485 ◽  
pp. 405-408 ◽  
Author(s):  
R.J. Kumar ◽  
Peter A. Losee ◽  
Can Hua Li ◽  
Joseph Seiler ◽  
I. Bhat ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Decay Rate ◽  
Minority Carrier ◽  
Epitaxial Layers ◽  
Pin Diodes ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Decay Times ◽  
Photoconductivity Decay

A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times varying from 60 ns to 500 ns have been measured, with the decay increasing with thickness. Device simulations show that I-V characteristics of pin diodes fabricated with these epitaxial layers are compatible with the observed decay times.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

3D Effects on Minority Carrier Recombination in Homogeneous Silicon Wafers

2002 ◽  
Vol T101 (1) ◽  
pp. 61
Author(s):  
J. Storg?rds ◽  
H. V?in?l? ◽  
M. Yli-Koski ◽  
J. Sinkkonen
Keyword(s):  
Minority Carrier ◽  
Silicon Wafers ◽  
Carrier Recombination ◽  
3D Effects

scholarly journals CONSIDERATION OF SURFACE RECOMBINATION WHEN MEASURING THE RECOMBINATION LIFETIME FROM THE PHOTOCONDUCTIVITY DECAY IN LARGE-THICKNESS SAMPLES

2020 ◽  
Author(s):  
Svetlana Kobeleva ◽  
Ivan Schemerov ◽  
Artem Sharapov ◽  
Sergey Yurchuk
Keyword(s):  
Diffusion Length ◽  
Decay Curve ◽  
Surface Recombination ◽  
Life Time ◽  
Free Carrier ◽  
Silicon Sample ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Photoconductivity Decay ◽  
Effective Life

Surface recombination strongly influence on the photoconductivity decay curve. In this work it was shown that usually defined using this curve the effective life time don’t achieve maxima value if silicon sample thickness exceeds six diffusion length. In this case well known formulas for calculation of free carrier recombination lifetime need to be adjusted.

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