Heavy Ion Fluence Measurements Based on Radiation Effects Generated in CTA Foils

2008 ◽  
pp. 605-605-7
Author(s):  
Z Peimel-Stuglik ◽  
VA Skuratov
Keyword(s):  
Radiation Effects ◽  
Heavy Ion

scholarly journals Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Sensors ◽  
2020 ◽  
Vol 20 (14) ◽  
pp. 3946
Author(s):  
Linjie Fan ◽  
Jinshun Bi ◽  
Kai Xi ◽  
Gangping Yan
Keyword(s):  
Computer Aided Design ◽  
Radiation Effects ◽  
Heavy Ion ◽  
Silicon On Insulator ◽  
Voltage Sensitivity ◽  
Hall Voltage ◽  
Fully Depleted ◽  
Offset Voltage ◽  
Hall Sensors ◽  
Tcad Simulations

This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer aided design (TCAD) simulations with insulator fixed charge, radiation, heavy ion, and galvanomagnetic transport models, the performances of the transient current, Hall voltage, sensitivity, efficiency, and offset voltage have been evaluated. For the TID effect, the Hall voltage and sensitivity of the sensor increase after irradiation, while the efficiency and offset voltage decrease. As for TDR and SET effects, when the energy deposited on the sensor during a nuclear explosion or heavy ion injection is small, the transient Hall voltage of the off-state sensor first decreases and then returns to the initial value. However, if the energy deposition is large, the transient Hall voltage first decreases, then increases to a peak value and decreases to a fixed value. The physical mechanisms that produce different trends in the transient Hall voltage have been analyzed in detail.

Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories

2019 ◽  
Vol 102 ◽  
pp. 113450
Author(s):  
Ya-nan Yin ◽  
Jie Liu ◽  
Tian-qi Liu ◽  
Bing Ye ◽  
Qing-gang Ji ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Heavy Ion ◽  
Floating Gate ◽  
Flash Memories

scholarly journals SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1531 ◽  
Author(s):  
Chang Cai ◽  
Shuai Gao ◽  
Peixiong Zhao ◽  
Jian Yu ◽  
Kai Zhao ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Radiation Effects ◽  
Large Scale ◽  
Random Access ◽  
Radiation Sensitivity ◽  
Heavy Ion ◽  
High Energy ◽  
Radiation Environment ◽  
Single Event

Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were ~3.5 nJ, and the SEU cross-sections were correlated positively to the laser’s energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.

Radiation Effects in Nonmetals: Amorphization, Phase Decomposition, and Nanoparticles

1998 ◽  
Vol 540 ◽  
Author(s):  
A. Meldrum ◽  
L.A. Boatner ◽  
C.W. White ◽  
D.O. Henderson
Keyword(s):  
Ion Implantation ◽  
Electron Irradiation ◽  
Radiation Effects ◽  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Semiconductor Nanocrystals ◽  
Heavy Ion ◽  
Fused Silica ◽  
Near Surface

AbstractRadiation effects in nonmetals have been studied for well over a century by geologists, mineralogists, physicists, and materials scientists. The present work focuses on recent results of investigations of the ion-beam-induced amorphization of the ABO4 compounds – including the orthophosphates (LnPO4; Ln = lanthanides) and the orthosilicates: zircon (ZrSiO4), hafnon (HfSiO4), and thorite (ThSiO4). In the case of the orthosilicates, heavy-ion irradiation at elevated temperatures causes the precipitation of a nanocrystalline metal oxide. Electron irradiation effects in these amorphized insulating ceramics can produce localized recrystallization on a nanometer scale. Similar electron irradiation techniques were used to nucleate monodispersed compound semiconductor nanocrystals formed by ion implantation of the elemental components into fused silica. Methods for the formation of novel structural relationships between embedded nanocrystals and their hosts have been developed and the results presented here demonstrate the general flexibility of ion implantation and irradiation techniques for producing unique near-surface microstructures in ion-implanted host materials.

Application of Ion Beam Techniques to the Study of Glass Durability: Enhanced Dissolution in Saline and Radiation Effects

1981 ◽  
Vol 6 ◽  
Author(s):  
C. Burman ◽  
Wang Ke-Ming ◽  
W.A. Lanford
Keyword(s):  
Aqueous Solutions ◽  
Radiation Effects ◽  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
Nuclear Reaction Analysis ◽  
Distilled Water ◽  
Hydrogen Water ◽  
Enhanced Dissolution ◽  
Implantation Techniques

ABSTRACTNuclear reaction analysis, Rutherford backscattering and ion implantation techniques are applied to the study of the reaction between glass and aqueous solutions. The use of these techniques is described as are some of the results obtained. Solutions of NaCl are seen to etch some glasses several orders of magnitude faster than distilled water. Radiation damage created by high energy heavy ion bombardment is seen to have great effects on the penetration of hydrogen (water) into glass.

Heavy Ion Radiation Effects Studies With Ion Photon Emission Microscopy

2011 ◽  
Author(s):  
J. V. Branson ◽  
K. Hattar ◽  
G. Vizkelethy ◽  
C. J. Powell ◽  
P. Rossi ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Photon Emission ◽  
Heavy Ion ◽  
Ion Radiation Effects ◽  
Emission Microscopy ◽  
Heavy Ion Radiation

Heavy Ion and Proton Induced Radiation Effects on Commercial Analog Switch Microcircuits

2016 ◽  
Author(s):  
R. Koga ◽  
J. George ◽  
S. Davis ◽  
B. Buck ◽  
K. Bojanowski ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Heavy Ion ◽  
Analog Switch

scholarly journals Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory

2019 ◽  
Vol 66 (7) ◽  
pp. 1715-1718 ◽  
Author(s):  
Stefan Petzold ◽  
S. U. Sharath ◽  
Jonas Lemke ◽  
Erwin Hildebrandt ◽  
Christina Trautmann ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Radiation Effects ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Heavy Ion ◽  
Access Memory ◽  
Ion Radiation Effects ◽  
Heavy Ion Radiation
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