Heavy Ion Radiation Effects Studies With Ion Photon Emission Microscopy

2011 ◽  
Author(s):  
J. V. Branson ◽  
K. Hattar ◽  
G. Vizkelethy ◽  
C. J. Powell ◽  
P. Rossi ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Photon Emission ◽  
Heavy Ion ◽  
Ion Radiation Effects ◽  
Emission Microscopy ◽  
Heavy Ion Radiation

scholarly journals Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory

2019 ◽  
Vol 66 (7) ◽  
pp. 1715-1718 ◽  
Author(s):  
Stefan Petzold ◽  
S. U. Sharath ◽  
Jonas Lemke ◽  
Erwin Hildebrandt ◽  
Christina Trautmann ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Radiation Effects ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Heavy Ion ◽  
Access Memory ◽  
Ion Radiation Effects ◽  
Heavy Ion Radiation

Probing heavy ion radiation effects in silicon carbide (SiC) via 3D integrated multimode vibrating diaphragms

2019 ◽  
Vol 114 (10) ◽  
pp. 101901 ◽  
Author(s):  
Hailong Chen ◽  
Hao Jia ◽  
Wenjun Liao ◽  
Vida Pashaei ◽  
Charles N. Arutt ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Radiation Effects ◽  
Heavy Ion ◽  
Ion Radiation Effects ◽  
Heavy Ion Radiation

Heavy Ion Radiation Effects on a 130-nm COTS NVSRAM Under Different Measurement Conditions

2018 ◽  
Vol 65 (5) ◽  
pp. 1119-1126 ◽  
Author(s):  
Tianqi Liu ◽  
Jie Liu ◽  
Kai Xi ◽  
Zhangang Zhang ◽  
Deyan He ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Heavy Ion ◽  
Ion Radiation Effects ◽  
Heavy Ion Radiation

Analysis of Delta Iddq Soft Fails on Pass Chips

2006 ◽  
Author(s):  
I. Österreicher ◽  
S. Eckl ◽  
B. Tippelt ◽  
S. Döring ◽  
R. Prang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Photon Emission ◽  
Complete Analysis ◽  
Functional Tests ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Current Consumption ◽  
Emission Microscopy ◽  
Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

A Study of Clustering for the Enhancement of Image Resolution in Dynamic Photon Emission

2019 ◽  
Author(s):  
S. Chef ◽  
C. T. Chua ◽  
C. L. Gan
Keyword(s):  
Signal To Noise Ratio ◽  
Photon Emission ◽  
Optical Signal ◽  
Image Resolution ◽  
Time Dimension ◽  
Processing Scheme ◽  
3D Space ◽  
Initial Acquisition ◽  
Resolution Limits ◽  
Emission Microscopy

Abstract Limited spatial resolution and low signal to noise ratio are some of the main challenges in optical signal observation, especially for photon emission microscopy. As dynamic emission signals are generated in a 3D space, the use of the time dimension in addition to space enables a better localization of switching events. It can actually be used to infer information with a precision above the resolution limits of the acquired signals. Taking advantage of this property, we report on a post-acquisition processing scheme to generate emission images with a better image resolution than the initial acquisition.

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