Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry

2001 ◽  
Author(s):  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Test Method ◽  
Silicon Substrates ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Determination of the Nitrogen Content of as-Implanted and Annealed SIMOX Substrates

1987 ◽  
Vol 107 ◽  
Author(s):  
J.A. Kilner ◽  
R.J. Chater ◽  
S. Biswas ◽  
P.L.F. Hemment ◽  
K.J. Reeson
Keyword(s):  
Mass Spectrometry ◽  
Nitrogen Content ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Substrate Material ◽  
Contaminant Level ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

AbstractSIMOX substrate material from two sources, both as-implanted and annealed, have been analysed by Secondary Ion Mass Spectrometry (SIMS) to determine the nitrogen concentration in the silicon overlayer. A variety of different analytical conditions were used on two different SIMS instruments to reduce the possibility of artefacts arising from the difficulties of analysing nitrogen in these materials. The nitrogen contaminant level was found to be consistently below 5 x 1017 nitrogen atoms cm-3, for all the material analysed.

Silicon Interstitial Driven Loss of Substitutional Carbon from SiGeC Structures

2001 ◽  
Vol 669 ◽  
Author(s):  
M. S. Carroll ◽  
J. C. Sturm ◽  
E. Napolitani ◽  
D. De Salvador ◽  
M. Berti ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Carbon Atom ◽  
Secondary Ion Mass Spectrometry ◽  
Interstitial Atom ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silicon Carbon ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

ABSTRACTThe effect of annealing silicon capped pseudomorphic Si0.7865Ge0.21C0.0035 or Si0.998C0.002 layers on silicon substrates in nitrogen or oxygen at 850°C was examined using x-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS). Most substitutional carbon is lost from the alloy layers due to carbon out-diffusion rather than from precipitation. The carbon is found to diffuse more rapidly out of the SiGeC layer than the SiC layer after nitrogen and the carbon is found to leave the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.

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