Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

10.1520/f0951 ◽  
2003 ◽  
Author(s):  
Keyword(s):  
Silicon Wafers ◽  
Test Method ◽  
Interstitial Oxygen

Quantitative Infrared Spectroscopy of Interstitial Oxygen in Silicon Wafers Using Multivariate Calibration

1993 ◽  
Vol 47 (12) ◽  
pp. 2102-2107 ◽  
Author(s):  
J. H. Linn ◽  
K. L. Hanley
Keyword(s):  
Infrared Spectroscopy ◽  
Precision Measurement ◽  
Multivariate Calibration ◽  
Calibration Method ◽  
Silicon Wafers ◽  
Interstitial Oxygen ◽  
Measurement Capability ◽  
Wide Range ◽  
Single Calibration

A PLS multivariate calibration method is used to create a reliable means for the determination of the interstitial oxygen content in silicon wafers. The multivariate calibration, derived from silicon standards with various backside treatments, provides similar precision measurement capability when compared to peak area calibration curves established from individual backside treatments. In this case, the significant advantage of the multivariate calibration is that a single calibration can yield interstitial oxygen results that correlate favorably with vendor values over a wide range (20 to 40 ppma), regardless of the backside condition of the wafers.

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