scholarly journals Structure and optical properties of TiO2 thin films deposited by ALD method

Open Physics ◽  
2017 ◽  
Vol 15 (1) ◽  
pp. 1067-1071 ◽  
Author(s):  
Marek Szindler ◽  
Magdalena M. Szindler ◽  
Paulina Boryło ◽  
Tymoteusz Jung
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Energy Dispersive Spectrometer ◽  
Atomic Layer ◽  
Tio2 Thin Films ◽  
X Ray Crystallography ◽  
Systems Software ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Titanium Dioxide Thin Films

AbstractThis paper presents the results of study on titanium dioxide thin films prepared by atomic layer deposition method on a silicon substrate. The changes of surface morphology have been observed in topographic images performed with the atomic force microscope (AFM) and scanning electron microscope (SEM). Obtained roughness parameters have been calculated with XEI Park Systems software. Qualitative studies of chemical composition were also performed using the energy dispersive spectrometer (EDS). The structure of titanium dioxide was investigated by X-ray crystallography. A variety of crystalline TiO2was also confirmed by using the Raman spectrometer. The optical reflection spectra have been measured with UV-Vis spectrophotometry.

scholarly journals The optical parameters of TiO2 antireflection coating prepared by atomic layer deposition method for photovoltaic application

2020 ◽  
Vol 50 (4) ◽  
Author(s):  
Marek Szindler ◽  
Magdalena M. Szindler
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Energy Dispersive Spectrometer ◽  
Atomic Layer ◽  
Antireflection Coating ◽  
Optical Parameters ◽  
Tio2 Thin Films ◽  
Layer Deposition ◽  
Vis Spectroscopy ◽  
Titanium Dioxide Thin Films

Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO2 thin films. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS).

Atomic Layer Deposition of Titanium Dioxide Thin Films from Cp*Ti(OMe)3 and Ozone

2009 ◽  
Vol 113 (52) ◽  
pp. 21825-21830 ◽  
Author(s):  
Martin Rose ◽  
Jaakko Niinistö ◽  
Pawel Michalowski ◽  
Lukas Gerlich ◽  
Lutz Wilde ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Titanium Dioxide Thin Films ◽  
Cp Ti

scholarly journals Titanium dioxide thin films by atomic layer deposition: a review

2017 ◽  
Vol 32 (9) ◽  
pp. 093005 ◽  
Author(s):  
Janne-Petteri Niemelä ◽  
Giovanni Marin ◽  
Maarit Karppinen
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Titanium Dioxide Thin Films

Titanium Dioxide Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition for OLED Passivation

2008 ◽  
Vol 8 (9) ◽  
pp. 4726-4729 ◽  
Author(s):  
Woong-Sun Kim ◽  
Myoung-Gyun Ko ◽  
Tae-Sub Kim ◽  
Sang-Kyun Park ◽  
Yeon-Keon Moon ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Transmission Rate ◽  
Atomic Layer ◽  
Titanium Dioxide Film ◽  
Uncoated Sample ◽  
Layer Deposition ◽  
Titanium Dioxide Thin Films ◽  
Dioxide Film

Plasma enhanced atomic layer deposition (PEALD) of titanium dioxide thin films was conducted using Tetrakis dimethylamino titanium (TDMATi) and an oxygen plasma on a polyethersulfon (PES) substrate at a deposition temperature of 90 °C. The effects of the induced plasma power on passivation properties were investigated according to film thickness. The growth rate of the titanium dioxide film was 0.8 Å/cycle, and the water vapor transmission rate (WTVR) for a 80 nm titanium dioxide film was 0.023 g/m2·day. The passivation performance of the titanium dioxide film was investigated using an organic light-emitting diode (OLED). The coated OLED lifetime was 90 h, 15 times longer than that of an uncoated sample.

Phase-gradient atomic layer deposition of TiO2 thin films by plasma-induced local crystallization

2021 ◽  
Author(s):  
Dohyun Go ◽  
Jaehyeong Lee ◽  
Jeong Woo Shin ◽  
Sungje Lee ◽  
Wangu Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tio2 Thin Films ◽  
Phase Gradient ◽  
Layer Deposition

Various Applications of Multifunctional Thin Films with Specific Properties Deposited by the ALD Method

2019 ◽  
Vol 293 ◽  
pp. 111-123
Author(s):  
Paulina Boryło ◽  
Marek Szindler ◽  
Krzysztof Lukaszkowicz
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Atomic Layer ◽  
Short Circuit Current ◽  
Transparent Conductive Oxide ◽  
Atomic Force ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

This paper presents application examples of atomic layer deposition method (ALD) adopted for production of multifunctional thin films for various usage such as passive, antireflection and transparent conductive films. First part of this paper introduces the mechanism of ALD process, in the rest of it, aluminum oxide (as passive and antireflection) and zinc oxide (as antireflection and transparent conductive) ALD thin films are presented. In the literature one can find reports on the use of the Al2O3 layer as passivating and ZnO layers as a transparent conductive oxide in diodes, polymeric and dye sensitized solar cells. In this article, the ALD layers were tested for their use in silicon solar cells, using their good electrical and optical properties. For examination of prepared thin films characteristics, following research methods were used: scanning electron microscope, atomic force microscope, X-ray diffractometer, ellipsometer, UV/VIS spectrometer and resistance measurements. By depositing a layer thickness of about 80 nm, the short-circuit current on the surface of the solar cell was increased three times while reducing the reflection of light. In turn, by changing the deposition temperature of the ZnO thin film, you can control its electrical properties while maintaining high transparency. The obtained results showed that the ALD method provide the ability to produce a high quality multifunctional thin films with the required properties.

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