Spectroscopic ellipsometry characterization of spin-coated Ge25S75 chalcogenide thin films

2017 ◽  
Vol 89 (4) ◽  
pp. 437-449 ◽  
Author(s):  
Petr Janicek ◽  
Stanislav Slang ◽  
Karel Palka ◽  
Miroslav Vlcek
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Absorption Edge ◽  
Short Wavelength ◽  
Optical Constants ◽  
Annealing Temperature ◽  
Optical Transition ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Wavelength Absorption

AbstractSpectroscopic ellipsometry study on spin-coated non-toxic Ge25S75 thin films annealed at different temperatures were conducted. Multi sample analysis with two sets of samples spin-coated onto soda-lime glass and onto silicon wafers was utilized. Optical constants (refractive index n and extinction coefficient k) of these films were determined from ellipsometric data recorded over a wide spectral range (0.05–6 eV). Different parametrization of Ge25S75 complex dielectric permittivity which consists of a Tauc-Lorentz or Cody-Lorentz oscillator describing the short wavelength absorption edge, a Lorentz or Gauss oscillators describing phonon absorption or optically active absorption of alkyl ammonium germanium salts in the middle infrared part of spectra is discussed. Using a Mott-Davis model, the decrease in local disorder with increasing annealing temperature is quantified from the short wavelength absorption edge onset. Using the Wemple-DiDomenico single oscillator model for the transparent part of the optical constants spectra, a decrease in the centroid distance of the valence and conduction bands with increasing annealing temperature is shown and increase in intensity of the inter-band optical transition due to annealing temperature occurs. Intensity of absorption near 3000 cm−1 could be used as alternative method to evaluation of quality of prepared films.

Dielectric and I-V Characteristic of Lead Titanate Thin Films Prepared on ITO Glass Substrate

2015 ◽  
Vol 1109 ◽  
pp. 461-465 ◽  
Author(s):  
Nurbaya Zainal ◽  
Mohd Hafiz Wahid ◽  
Mohammad Rusop
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
High Performance ◽  
Annealing Temperature ◽  
Low Cost ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Ito Glass

Performance of lead titanate, (PbTiO3) thin films have been successfully investigated on microstructural properties, I-V characteristic, dielectric properties, and ferroelectric properties. PbTiO3offers variety of application as transducer, ferroelectric random access memory, transistor, high performance capacitor, sensor, and many more due to its ferroelectric behavior. Preparation of the films are often discussed in order to improve the structural properties, like existence of grain boundaries, particle uniformity, presents of microcrack films, porosities, and many more. Yet, researchers still prepare PbTiO3thin films at high crystallization temperature, certainly above than 600 ̊C to obtain single crystal perovskite structure that would be the reason to gain high spontaneous polarization behavior. Although this will results to high dielectric constant value, the chances that leads to high leakage current is a major failure in device performance. Thus, preparation the thin films at low annealing temperature quite an essential study which is more preferable deposited on low-cost soda lime glass. The study focuses on low annealing temperature of PbTiO3thin films through sol-gel spin coating method and undergo for dielectric and I-V measurements.

DETERMINATION OF THE OPTICAL CONSTANTS OF InxSey THIN FILMS DEPOSITED BY EVAPORATION AND COEVAPORATION

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1687-1691 ◽  
Author(s):  
J. SANDINO ◽  
G. GORDILLO
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Interference Effects ◽  
Spectral Transmittance ◽  
Cauchy Equation ◽  
Glass Substrates ◽  
Special Procedure

In x Se y thin films, grown on soda lime glass substrates in the In 6 Se 7 phase by evaporation of the In 2 Se 3 compound and in the In 2 Se 3 phase by coevaporation of In and Se, were optically characterized through spectral transmittance measurements. A special procedure was developed to determine the thickness d and the optical constants (refractive index n, absorption coefficient α, and optical gap Eg). This includes experimental measurements of the spectral transmittance and the use of a model taking into account interference effects induced by internal reflections presented in the interfaces substrate/film and film/air and the fitting of the n vs. λ curve to the Cauchy equation (n = A + B/λ2). The optical constants of the In x Se y thin films were corrected comparing the experimental transmittance spectrum with the theoretical one. The results revealed that the optical constants of the In x Se y films were significantly affected by the deposition method.

scholarly journals Comparing Thermal Durability and Effects of Annealing Temperature on Characteristics of Hydrogen-Doped ZnO, AZO, and GZO Thin Films

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Dung Van Hoang ◽  
Anh Tuan Thanh Pham ◽  
Truong Huu Nguyen ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Hydrogen Atoms ◽  
High Annealing Temperature ◽  
Thermal Durability ◽  
Glass Substrates ◽  
High Annealing ◽  
Doped Zno

In this work, undoped, aluminum-, and gallium-doped ZnO thin films (ZnO-H, AZO-H, and GZO-H, respectively) deposited on soda-lime glass substrates by magnetron sputtering method in a gas mixture of hydrogen and argon are annealed at various temperatures in the range of 200–500°C in air to evaluate the durability of those films under annealing temperature. From photoluminescence spectra, formation of point defects, especially oxygen vacancies, when hydrogen diffuses out of the films at high annealing temperature is exhibited via a significant increase of visible emissions. We find out that carrier concentration and Hall mobility of AZO-H and ZnO-H films dramatically decrease, while those of GZO-H film are still stable as the annealing temperature increased from 200°C to 300°C. We proposed a model for interpreting the thermal durability of GZO-H film that, at an annealing temperature of 300°C, Ga3+ ions located at adjacent Zn sites can push hydrogen atoms, which are broken out of the antibonding sites which are perpendicular to the c -axis (AB┴), into bond center sites paralleled to the c -axis (BC//). The movement of hydrogen from AB┴ to BC// site also gives rise to the durability of electrical properties of GZO-H films at the high annealing temperature.

scholarly journals Effects of Heating Mode and Temperature on the Microstructures, Electrical and Optical Properties of Molybdenum Thin Films

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1634 ◽  
Author(s):  
Haili Zhao ◽  
Jingpei Xie ◽  
Aixia Mao ◽  
Aiqin Wang ◽  
Yanfang Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Heating Temperature ◽  
Annealing Treatment ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Substrate Heating ◽  
Different Temperatures ◽  
Cigs Solar Cells ◽  
Heating Mode

In this paper, molybdenum (Mo) thin films are deposited on soda-lime glass (SLG) substrates by direct current magnetron sputtering and heated in three different modes at different temperatures, including substrate heating, annealing treatment, and both substrate heating and annealing treatment. The effects of heating temperature and heating mode on the structures, morphology, optical and electrical properties of Mo thin films were systematically investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), atomic force microscope (AFM) and UV-visible spectrophotometer (UV-vis spectra). It is shown that as the substrate and annealing temperature increase, the crystallinity of Mo thin films is improved, and the grain sizes become bigger. Especially in the mode of both substrate heating and annealing treatment at higher temperature, the obtained Mo thin films show higher crystallinity and conductivity. Moreover, with the increase of substrate and annealing temperature in different heating modes, both the surface compactness of Mo films and the optical reflectance increase correspondingly. Furthermore, the Mo film, prepared at the substrate heating temperature of 400 °C and annealed at 400 °C, showed excellent comprehensive performance, and the resistivity is as low as 1.36 × 10−5 Ω·cm. Using this optimized Mo thin film as an electrode, copper indium gallium selenium (CIGS) solar cells have a maximum photo-conversion efficiency of 12.8%.

Optical constants of DC magnetron sputtered titanium dioxide thin films measured by spectroscopic ellipsometry

2003 ◽  
Vol 38 (9) ◽  
pp. 773-778 ◽  
Author(s):  
B. Karunagaran ◽  
R. T. Rajendra Kumar ◽  
C. Viswanathan ◽  
D. Mangalaraj ◽  
Sa. K. Narayandass ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Titanium Dioxide Thin Films

Analysis of Cu(InGa)Se2 Alloy Film Optical Properties and the Effect of Cu Off-Stoichiometry

2005 ◽  
Vol 865 ◽  
Author(s):  
P. D. Paulson ◽  
S. H. Stephens ◽  
W. N. Shafarman
Keyword(s):  
Optical Constants ◽  
Soda Lime ◽  
Alloy Film ◽  
Relative Volume ◽  
Soda Lime Glass ◽  
Distinctive Features ◽  
Glass Substrates ◽  
Wide Range ◽  
Two Phases

AbstractVariable angle spectroscopic ellipsometry has been used to characterize Cu(InGa)Se2 thin films as a function of relative Ga content and to study the effects of Cu off-stoichiometry. Uniform Cu(InGa)Se2 films were deposited on Mo-coated soda lime glass substrates by elemental evaporation with a wide range of relative Cu and Ga concentrations. Optical constants of Cu(InGa)Se2 were determined over the energy range of 0.75–C4.6 eV for films with 0 ≤ Ga/(In+Ga) ≤ 1 and used to determine electronic transition energies. Further, the changes in the optical constants and electronic transitions as a function of Cu off-stoichiometry were determined in Cu-In-Ga-Se films with Cu atomic concentration varying from 10 to 25 % and Ga/(In+Ga) = 0.3. Films with Cu in the range 16–24 % are expected to contain 2 phases so an effective medium approximation is used to model the data. This enables the relative volume fractions of the two phases, and hence composition, to be determined. Two distinctive features are observed in the optical spectra as the Cu concentration decreases. First, the fundamental bandgaps are shifted to higher energies. Second, the critical point features at higher energies become broader suggesting degradation of the crystalline quality of the material.

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

scholarly journals Origin of Mangetotransport Properties in APCVD Deposited Tin Oxide Thin Films

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5182
Author(s):  
Krunoslav Juraić ◽  
Davor Gracin ◽  
Matija Čulo ◽  
Željko Rapljenović ◽  
Jasper Rikkert Plaisier ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Tin Oxide ◽  
Texture Coefficient ◽  
Chemical Vapour ◽  
Visible Spectrum ◽  
Soda Lime ◽  
Fine Tuning ◽  
Soda Lime Glass ◽  
Charge Carrier Density

Transparent conducting oxides (TCO) with high electrical conductivity and at the same time high transparency in the visible spectrum are an important class of materials widely used in many devices requiring a transparent contact such as light-emitting diodes, solar cells and display screens. Since the improvement of electrical conductivity usually leads to degradation of optical transparency, a fine-tuning sample preparation process and a better understanding of the correlation between structural and transport properties is necessary for optimizing the properties of TCO for use in such devices. Here we report a structural and magnetotransport study of tin oxide (SnO2), a well-known and commonly used TCO, prepared by a simple and relatively cheap Atmospheric Pressure Chemical Vapour Deposition (APCVD) method in the form of thin films deposited on soda-lime glass substrates. The thin films were deposited at two different temperatures (which were previously found to be close to optimum for our setup), 590 °C and 610 °C, and with (doped) or without (undoped) the addition of fluorine dopants. Scanning Electron Microscopy (SEM) and Grazing Incidence X-ray Diffraction (GIXRD) revealed the presence of inhomogeneity in the samples, on a bigger scale in form of grains (80–200 nm), and on a smaller scale in form of crystallites (10–25 nm). Charge carrier density and mobility extracted from DC resistivity and Hall effect measurements were in the ranges 1–3 × 1020 cm−3 and 10–20 cm2/Vs, which are typical values for SnO2 films, and show a negligible temperature dependence from room temperature down to −269 °C. Such behaviour is ascribed to grain boundary scattering, with the interior of the grains degenerately doped (i.e., the Fermi level is situated well above the conduction band minimum) and with negligible electrostatic barriers at the grain boundaries (due to high dopant concentration). The observed difference for factor 2 in mobility among the thin-film SnO2 samples most likely arises due to the difference in the preferred orientation of crystallites (texture coefficient).

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