scholarly journals Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

2016 ◽  
Vol 67 (5) ◽  
pp. 377-382 ◽  
Author(s):  
Arpád Kósa ◽  
Miroslav Mikolášek ◽  
Ľubica Stuchlíková ◽  
Ladislav Harmatha ◽  
Wojciech Dawidowski ◽  
...  
Keyword(s):  
Solar Cell ◽  
Dark Current ◽  
Open Circuit Voltage ◽  
Deep Level ◽  
Open Circuit ◽  
Electrophysical Properties ◽  
Fourier Spectroscopy ◽  
Defect States ◽  
Current Voltage ◽  
Sun Light

AbstractThis paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (I–V) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined fromI–Vmeasurement at 1 and 20× sun light concentrations. Three electron like defects TAn1, TAn2, TDnand one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.

Improvement of Pin Photodiodes on the Soi Layer by Rapid Thermal Annealing

1995 ◽  
Vol 378 ◽  
Author(s):  
Yoshimaro Fujii ◽  
Akira Usami ◽  
Katsuhiro Fujiyoshi ◽  
Hideaki Yoshida ◽  
Masaya Ichimura
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dark Current ◽  
Open Circuit Voltage ◽  
Deep Level ◽  
Open Circuit ◽  
Silicon On Insulator ◽  
Transient Spectroscopy ◽  
Pin Photodiodes ◽  
Spectral Responses

AbstractElectrical properties of PIN photodiodes fabricated on the bonded silicon on insulator (SOI) wafers annealed at 900°C for 5 seconds were evaluated in order to investigate the effect of rapid thermal annealing (RTA) on SOI wafers. Traps in the SOI layers with different thicknesses (10,30,100 μm) were investigated using the deep level transient spectroscopy (DLTS) method. In the SOI layer with a thickness of 100 μm, a trap with deep energy level (about Ec-Et=0.55 eV) was observed and the concentration of the trap decreased from 5.0 × 1011 cm−3 to 1.5 × 1011 cm−3 by RTA. For PIN photodiodes on the 100 μm-thick SOI layer, the dark current decreased from 2 × 10−9 A to 6 × 10−10 A, and sensitivity uniformity for a 35 μmφ light spot and spectral responses were both improved by RTA. Lifetimes were obtained from open-circuit voltage (Voc) decay curves for 940 nm and 655 nm light, and they increased from 37 μs to 57 μs and from 47 μs to 62 μs, respectively, by RTA. For thinner SOI layers (thickness=10, 30 μm), PIN photodiodes have good uniformity and low dark current, and their characteristics were not changed by RTA.

scholarly journals Synthesis, characterization, and performance of oligothiophene cyanoacrylic acid derivatives for solar cell applications

2021 ◽  
Vol 8 (6) ◽  
pp. 128-135
Author(s):  
Al-Dmour et al. ◽  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Dark Current ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Cyanoacrylic Acid ◽  
Thiophene Moiety ◽  
Onset Voltage ◽  
And Performance ◽  
Chain Lengths

New dye sensitizers based on an oligothiophene cyanoacrylic acid derivative were synthesized and characterized for solar cell applications. The structures of the new dyes prepared as sensitizers based on oligothiophenes, namely5,5''-di-2-cyanoacrylic acid [2,2':5',2''-terthiophene] (dye1), [2,2':5',2''-terthiophene]-5-cyanoacrylic acid(dye2), and [2,2':5',2'':5'',2'''-quaterthiophene]-5-cyanoacrylic acid(dye3) were confirmed by elemental analysis, mass spectrometry, and 1H-NMR spectral data. The P3HT/dye2/nc-TiO2 solar cell produced the highest efficiency of 0.05% with an open circuit voltage of 0.65V compared to dyes 1 and 3 solar cells. That may have been attributed to the dyes’ molecular structure, which had different chain lengths and numbers of groups of cyanoacrylic connected to the dyes’ thiophene moiety The dark current suppressed in the P3HT/dye2/nc-TiO2 solar cells indicated the formation of the charge blocking layer, which produced an enhanced open-circuit voltage accompanied by a high onset voltage.

scholarly journals Effect of solar cell structure on the radiation resistance of an InP solar cell

2020 ◽  
Vol 191 ◽  
pp. 01005
Author(s):  
Halima Mazouz ◽  
Abderrahmane Belghachi ◽  
Pierre-Olivier Logerais
Keyword(s):  
Solar Cell ◽  
Electron Irradiation ◽  
Open Circuit Voltage ◽  
Deep Level ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Solar Cell Structure ◽  
Simulation Results

Effects of electron irradiation-induced deep level defects have been studied on both n/p and p/n Indium Phosphide (InP) solar cells with very thin emitters. The simulation results reveal that the n/p structure offers a somewhat better short-circuit current and that the p/n structure renders an improved open-circuit voltage, not only before electron irradiation but also after 1 MeV electron irradiation with 5×1015 electrons per cm2 fluence. Further, the calculated findings highlight that the n/p solar cell structure is more resistant than that of a p/n structure.

High Sensitivity Photochemical Sensors Based on Amorphous Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
E. Fortunato ◽  
A. Malik ◽  
A. Séco ◽  
A. Maçarico ◽  
R. Martins
Keyword(s):  
Dark Current ◽  
Open Circuit Voltage ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Chemical Oxidation ◽  
Hydrogen Atmosphere ◽  
Open Circuit ◽  
Current Voltage ◽  
Magnitude Variation ◽  
Current Voltage Characteristics

ABSTRACTHydrogenated amoiphous silicon photochemical sensors based on Pd-MIS structures were produced by Plasma Enhanced Chemical Vapor Deposition with two different oxidized surfaces (thermal and chemical oxidation). The behaviour of dark and illuminated current-voltage characteristics in air and in the presence of a hydrogen atmosphere is explained by the changes induced by the gases in the work function of the metal, modifying the electrical properties of the interface. The photochemical sensors produced present more than 2 orders of magnitude variation on the reverse dark current when in presence of 400 ppm hydrogen to which it corresponds a decrease of 45% on the open circuit voltage.

scholarly journals Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1966
Author(s):  
Domenico Pellegrino ◽  
Lucia Calcagno ◽  
Massimo Zimbone ◽  
Salvatore Di Franco ◽  
Antonella Sciuto
Keyword(s):  
Deep Level ◽  
Electrical Characterization ◽  
High Fluence ◽  
Defect States ◽  
Exponential Parameter ◽  
Current Voltage ◽  
Different Temperatures ◽  
In Series ◽  
Transient Spectroscopy ◽  
Fluence Range

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (≤1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

The improvement of open circuit voltage by the sputtered TiO2 layer for efficient perovskite solar cell

Vacuum ◽  
2016 ◽  
Vol 128 ◽  
pp. 91-98 ◽  
Author(s):  
Sheng Ge ◽  
Haitao Xu ◽  
Wenzhen Wang ◽  
Runan Cao ◽  
Yanglin Wu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cell ◽  
Open Circuit ◽  
Tio2 Layer

A p-Type NiO-Based Dye-Sensitized Solar Cell with an Open-Circuit Voltage of 0.35 V

2009 ◽  
Vol 48 (24) ◽  
pp. 4402-4405 ◽  
Author(s):  
Elizabeth A. Gibson ◽  
Amanda L. Smeigh ◽  
Loïc Le Pleux ◽  
Jérôme Fortage ◽  
Gerrit Boschloo ◽  
...  
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Dye Sensitized Solar Cell ◽  
Dye Sensitized ◽  
P Type

scholarly journals Analysis of Losses in Open Circuit Voltage for an 18-μm Silicon Solar Cell

2015 ◽  
Vol 5 (4) ◽  
pp. 682-694 ◽  
Author(s):  
Lu Wang ◽  
Jianshu Han ◽  
Anthony Lochtefeld ◽  
Andrew Gerger ◽  
Allen Barnett
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit
Sign in / Sign up

Export Citation Format

Share Document