Transition strategies for managing technological discontinuities: lessons from the history of the semiconductor industry

2002 ◽  
Vol 23 (4) ◽  
pp. 261 ◽  
Author(s):  
J.W. Stoelhorst
IEE Review ◽  
1991 ◽  
Vol 37 (10) ◽  
pp. 355
Author(s):  
D.A. Gorham

MRS Bulletin ◽  
1995 ◽  
Vol 20 (11) ◽  
pp. 61-64 ◽  
Author(s):  
M.A. Fury ◽  
D.L. Scherber ◽  
M.A. Stell

As recently as 1993, the prevailing presumption among the semiconductor technical community was that then-current development efforts associated with aluminum lines and tungsten damascene vias needed to shift rapidly to copper multilevel interconnect schemes. This is exemplified by the June 1993 issue of the MRS Bulletin, which featured copper metallization as its theme. In the intervening years, however, that same technical community revised the Semiconductor Industry Association (SIA) roadmap and placed renewed emphasis on the use of an all-aluminum interconnect scheme. This was done largely in deference to the costs associated with converting existing semiconductor lines to copper-compatible facilities. In addition to tooling costs, there is a learning curve for copper systems that remains to be established for device reliability, field failures, yield learning, and process maturation. On the other hand, existing fabs are already compatible with aluminum metallurgies, and there is a rich history of reliability and yield data.This change in direction creates two immediate needs: (1) the need to fill small-diameter vertical interconnects (vias) with void-free aluminum and (2) the need to remove the top surface aluminum resulting from its blanket deposition (overburden) following the metal fill. In addition, for high circuit-density applications, it may be desirable, if not necessary, to form the metal lines using the same damascene fill method as is used for the vias. This process strategy replaces metal etching and insulator gap fill with insulator (usually silicon oxide) etching and metal gap fill.


2014 ◽  
Vol 70 (a1) ◽  
pp. C1299-C1299
Author(s):  
Akihiko Fujiwara ◽  
Yoko Sugawara ◽  
Atsushi Nakagawa ◽  
Masaki Takata

A century ago, crystallogtaphy ushered in the era of modern science & technology in Japan. The beginning of modern crystallography in Japan dates back to 1913. Torahiko Terada (Tokyo Imperial University) demonstrated X-ray diffraction[1] and Shoji Nishikawa (Tokyo Imperial University) reported on X-ray patterns of fibrous, lamellar and granular substances[2]. In 1936, Ukichiro Nakaya (Hokkaido University) successfully classified natural snow crystals and made the first artificial snow crystals. In the last half-century, developments in crystallography helped form thriving manufacturing sectors such as the semiconductor industry, the iron and steel industries, the pharmaceutical industry, the electronics industry, the textile industry, and the polymer industry, as well as a wide array of academic research.


2018 ◽  
Vol 24 (1) ◽  
pp. 62-82
Author(s):  
Maximilian Sandholzer ◽  
Marc Wouters

The semiconductor industry is one of very few industries to have a standard for management accounting, and this concerns a method for calculating the cost of ownership (COO). This research investigates the history of the development of the COO standard, starting from the late 1980s and stretching to the mid-1990s, and explores the circumstances under which this development occurred. We find that the development and revision activities for COO built on complementary conditions, such as industry organizations, networks of professionals, and standard-setting procedures, which had been established for cooperation in research and development and for the development of technical standards. We suggest that these factors may explain the absence of standards in management accounting in many other settings.


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