Subsurface damage measurement in silicon wafers with cross-polarisation confocal microscopy

2006 ◽  
Vol 1 (2) ◽  
pp. 272 ◽  
Author(s):  
W.K. Lu ◽  
J.G. Sun ◽  
Z.J. Pei
Keyword(s):  
Confocal Microscopy ◽  
Subsurface Damage ◽  
Silicon Wafers

scholarly journals Effect of wear of diamond wire on surface morphology, roughness and subsurface damage of silicon wafers

Wear ◽  
2016 ◽  
Vol 364-365 ◽  
pp. 163-168 ◽  
Author(s):  
Arkadeep Kumar ◽  
Steffi Kaminski ◽  
Shreyes N. Melkote ◽  
Chris Arcona
Keyword(s):  
Surface Morphology ◽  
Subsurface Damage ◽  
Silicon Wafers ◽  
Diamond Wire

Optical Transmission Properties of Silicon Wafters: Theoretical Analysis

2004 ◽  
Author(s):  
J. M. Zhang ◽  
J. G. Sun ◽  
Z. J. Pei
Keyword(s):  
Optical Transmission ◽  
Skin Depth ◽  
Subsurface Damage ◽  
Silicon Wafers ◽  
Nondestructive Measurement ◽  
Laser Scattering ◽  
Quantitative Correlation ◽  
Transmission Properties ◽  
Damage Depth

As a nondestructive measurement method, laser scattering has been preliminarily applied to detect subsurface damage in silicon wafers, but the quantitative correlation between scatter images and subsurface damage depth has not been established yet. In order to assess subsurface damage depth in silicon wafers, a systematic study has been carried out. In the authors’ another paper, a detailed experimental investigation on optical transmission percentage of silicon wafers was presented. As a follow up, this paper will describe a method to calculate the “skin depth” of silicon wafers from the experimental data of optical transmission percentage. And also, how to apply this “skin depth” on assessment of subsurface damage depth will be discussed.

Measurement of subsurface damage in silicon wafers

1994 ◽  
Vol 16 (2) ◽  
pp. 139-144 ◽  
Author(s):  
U. Bismayer ◽  
E. Brinksmeier ◽  
B. Güttler ◽  
H. Seibt ◽  
C. Menz
Keyword(s):  
Subsurface Damage ◽  
Silicon Wafers

Micro-Raman Spectral Analysis of the Subsurface Damage Layer in Machined Silicon Wafers

2000 ◽  
Vol 15 (7) ◽  
pp. 1441-1444 ◽  
Author(s):  
Long-Qing Chen ◽  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
H. Y. Lin ◽  
Sanboh Lee
Keyword(s):  
Subsurface Damage ◽  
Silicon Wafers ◽  
Intense Band ◽  
Band Shift ◽  
Etching Depth ◽  
Micro Raman Spectroscopy ◽  
Damage Layer ◽  
Transmission Electron ◽  
Raman Spectral ◽  
Raman Spectral Analysis

In the present work we studied the depth of damage layer in machined silicon wafers that was incorporated with chemical etching using micro-Raman spectroscopy. Subsurface damage causes changes in the shape and intensity for the shoulder (450–570 cm−1) of the most intense band (519 cm−1) and the second band (300 cm−1) regions of the Raman spectrum. Etching reduces the thickness of the damage layer and, hence, the intensities at the shoulder and the second band. The intensities at the shoulder and the second band become stable when the damage layer is completely etched out. The shoulder consists of two Gaussian profiles: the major and the minor. The band for the major profile is independent of etching depth, but the band for the minor profile shifts toward the longer wave numbers with increasing etching period until the damage layer is completely etched out. The depth of the damage layer is determined by the profiles of the shoulder and the second band and confirmed by the band shift of the minor profile. Transmission electron microscopy (TEM) further verified the results with respect to the depth of the damage layer. TEM observation showed that dislocations and stacking faults are responsible for the subsurface damage.

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