scholarly journals Densification and Grain Growth of Indium-Tin-Oxide and Indium Oxide Thin Films Fabricated by Dip Coating Process

2009 ◽  
Vol 34 (2) ◽  
pp. 253-256 ◽  
Author(s):  
Yoshiyuki Seki ◽  
Seiji Hiratsuka ◽  
Meihan Wang ◽  
Shigeyuki Seki ◽  
Kouichi Haga ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Indium Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Dip Coating ◽  
Coating Process ◽  
Oxide Thin Films

Deposition of transparent conductive mesoporous indium tin oxide thin films by a dip coating process

2008 ◽  
Vol 43 (4) ◽  
pp. 1016-1022 ◽  
Author(s):  
Xueao Zhang ◽  
Wenjian Wu ◽  
Tian Tian ◽  
Yahui Man ◽  
Jianfang Wang
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Dip Coating ◽  
Coating Process ◽  
Oxide Thin Films

Formation of indium oxide thin films fabricated by a dip-coating process using indium 2-ethylhexanoate monohydroxide

2003 ◽  
Vol 169-170 ◽  
pp. 566-570 ◽  
Author(s):  
Emi Shigeno ◽  
Shigeyuki Seki ◽  
Kunihiko Shimizu ◽  
Yutaka Sawada ◽  
Makoto Ogawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Dip Coating ◽  
Coating Process ◽  
Oxide Thin Films

Indium–tin-oxide thin films prepared by dip-coating of indium diacetate monohydroxide and tin dichloride

2001 ◽  
Vol 388 (1-2) ◽  
pp. 22-26 ◽  
Author(s):  
Shigeyuki Seki ◽  
Yutaka Sawada ◽  
Toshikazu Nishide
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Dip Coating ◽  
Oxide Thin Films

Oxygen induced limitation on grain growth in RF sputtered Indium tin oxide thin films

2013 ◽  
Author(s):  
Buddhi Sagar Lamsal ◽  
Yung Huh ◽  
Mukul Dubey ◽  
K C Manoj ◽  
Swaminathan Venkatesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Films

Nanoscale Investigation of Grain Growth in RF-Sputtered Indium Tin Oxide Thin Films by Scanning Probe Microscopy

2014 ◽  
Vol 43 (11) ◽  
pp. 3965-3972 ◽  
Author(s):  
B. S. Lamsal ◽  
M. Dubey ◽  
V. Swaminathan ◽  
Y. Huh ◽  
D. Galipeau ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Tin Oxide ◽  
Scanning Probe Microscopy ◽  
Indium Tin Oxide ◽  
Scanning Probe ◽  
Oxide Thin Films ◽  
Probe Microscopy

Preparation and Characterization of Indium Tin Oxide for Optical Devices by Chemical Process

2006 ◽  
Vol 45 ◽  
pp. 2355-2361 ◽  
Author(s):  
Patcharaporn Itthivisit ◽  
Samart Kongtaweelert ◽  
Sakda Traisak
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Glass Substrate ◽  
Dip Coating ◽  
Coating Process ◽  
Gravimetric Analysis ◽  
Mixed Solution ◽  
Ito Thin Films

Indium tin oxide (In-Sn-O, ITO) system is typical widely used as transparent electrodes for display devices, transparent coatings for solar energy heat mirrors and window films in p-n heterojunction solar cells because of their’s unique properties of a high visible transparency, good electrical conductivity, and excellent adhesion to the substrate, stable chemical property and easy patterning ability. In this paper, preparation and characterization of Indium tin oxide (ITO) thin films were studied by deposited dip coating process onto glass substrate. The mixing of various molar ratio of indium chloride (InCl3) and tin chloride (SnCl2.2H2O), (In:Sn mole ratio , 9:1, 7:3, 1:1), in acetylacetone were used as the starting solution. The suitable In:Sn ratio for one stoichiometry indium tin oxide (In2Sn2O7) compound were studied via hydrolysis process of mixed solution. The result of thermal gravimetric analysis were used to supported and corrected of calcining temperature. The precipitated powders were calcined at 500 0C and 600 0C. The result of XRD spectrum indicated that the calcined 9:1 powders at 6000C was show the highest stoichiometry of indium tin oxide (In2Sn2O7) compound with a polycrystalline cubic structure. The ITO thin films were studied by deposited dip coating process onto glass substrate with 20 layers at 600 0C for 1 hour. The optical properties, band gap energy and microstructure of ITO thin films were investigated by UV-vis spectrophotometer and Scaning Electron Microscope (SEM) respectively. The result of SEM was shown highly homogeneous surface and average grain size 20 nm with 95% transmittance which corresponding to XRD results. The calculated energy gap of ITO film was 3.40 eV.

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