Coating Properties of Cu and TiO2 on Polymer Web Deposited by High Power Impulse Magnetron Sputtering With Positive Voltage Reversal (HIPIMS+VR) and Pulsed DC

2019 ◽  
Author(s):  
Mike Simmons ◽  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Coating Properties ◽  
Pulsed Dc ◽  
Positive Voltage

Influence of Ar/Kr ratio and pulse parameters in a Cr-N high power pulse magnetron sputtering process on plasma and coating properties

2014 ◽  
Vol 32 (2) ◽  
pp. 021513 ◽  
Author(s):  
Kirsten Bobzin ◽  
Nazlim Bagcivan ◽  
Sebastian Theiß ◽  
Jan Trieschmann ◽  
Ricardo Henrique Brugnara ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Coating Properties ◽  
Pulse Parameters ◽  
Power Pulse ◽  
Pulse Magnetron ◽  
High Power Pulse

scholarly journals The Effect of Match between High Power Impulse and Bias Voltage: TiN Coating Deposited by High Power Impulse Magnetron Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 822
Author(s):  
Chi-Lung Chang ◽  
Ching-Yen Lin ◽  
Fu-Chi Yang ◽  
Jian-Fu Tang
Keyword(s):  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Titanium Nitride ◽  
Bias Voltage ◽  
High Power ◽  
Bias Current ◽  
Preferred Orientation ◽  
Energy Output ◽  
Pulsed Dc ◽  
Hardness Values

Practical experience in the use of high power impulse magnetron sputtering (HiPIMS) technology has revealed that output bias current depends on the total energy output of the cathodes, which means that bias voltage settings do not necessarily match the actual output. In this study, we investigated the effects of bias current and voltage on the characteristics of titanium nitride thin films produced using high impulse magnetron sputtering. The bias current and voltage values were adjusted by varying the supplied cathode power and substrate bias under DC and pulsed-DC output models. Our results revealed that pulse delay (PD) and feed forward (FF) settings can be used to control bias current and voltage. Increasing the bias current from 0.56 to 0.84 was shown to alter the preferred orientation from (111) to (220), increase the deposition rate, and lead to a corresponding increase in film thickness. The surface morphology of all titanium nitride samples exhibited tapered planes attributable to the low bias current and voltage (−30 V). The maximum hardness values were as follows: DC mode (23 GPa) and pulsed-DC mode (19 GPa). The lower hardness values of pulsed-DC samples can be attributed to residual stress, preferred orientation, and surface morphology. The surface of the samples was shown to be hydrophobic, with contact angles of >100°.

Reactive deposition of Al–N coatings in Ar/N2 atmospheres using pulsed-DC or high power impulse magnetron sputtering discharges

Vacuum ◽  
2010 ◽  
Vol 85 (2) ◽  
pp. 120-125 ◽  
Author(s):  
A. Guillaumot ◽  
F. Lapostolle ◽  
C. Dublanche-Tixier ◽  
J.C. Oliveira ◽  
A. Billard ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Reactive Deposition ◽  
Pulsed Dc

Modeling the high power impulse magnetron sputtering discharge

2020 ◽  
pp. 159-221 ◽  
Author(s):  
Tiberiu Minea ◽  
Tomáš Kozák ◽  
Claudiu Costin ◽  
Jon Tomas Gudmundsson ◽  
Daniel Lundin
Keyword(s):  
Magnetron Sputtering ◽  
High Power

Characterization of Ti–Zr–V thin films deposited by DC and unipolar pulsed DC magnetron sputtering

Vacuum ◽  
2021 ◽  
Vol 188 ◽  
pp. 110200
Author(s):  
Sihui Wang ◽  
Wei Wei ◽  
Yonghao Gao ◽  
Haibin Pan ◽  
Yong Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Pulsed Dc ◽  
Pulsed Dc Magnetron Sputtering

Pulse synchronized substrate bias for the High Power Pulsed Magnetron Sputtering deposition of CrAlN

2021 ◽  
pp. 138792
Author(s):  
K. Bobzin ◽  
T. Brögelmann ◽  
N.C. Kruppe ◽  
M. Engels ◽  
C. Schulze
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Substrate Bias ◽  
Sputtering Deposition ◽  
Pulsed Magnetron

scholarly journals Effect of Voltage Pulse Width and Synchronized Substrate Bias in High-Power Impulse Magnetron Sputtering of Zirconium Films

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 7
Author(s):  
Chin-Chiuan Kuo ◽  
Chun-Hui Lin ◽  
Jing-Tang Chang ◽  
Yu-Tse Lin
Keyword(s):  
Growth Rate ◽  
Magnetron Sputtering ◽  
High Power ◽  
Pulse Width ◽  
Film Growth ◽  
Highly Charged Ions ◽  
Argon Pressure ◽  
Hexagonal Prism ◽  
Film Growth Rate ◽  
Charged Ions

The Zr film microstructure is highly influenced by the energy of the plasma species during the deposition process. The influences of the discharge pulse width, which is the key factor affecting ionization of sputtered species in the high-power impulse magnetron sputtering (HiPIMS) process, on the obtained microstructure of films is investigated in this research. The films deposited at different argon pressure and substrate biasing are compared. With keeping the same average HiPIMS power and duty cycle, the film growth rate of the Zr film decreases with increasing argon pressure and enhancing substrate biasing. In addition, the film growth rate decreases with the elongating HiPIMS pulse width. For the deposition at 1.2 Pa argon, extending the pulse width not only intensifies the ion flux toward the substrate but also increases the fraction of highly charged ions, which alter the microstructure of films from individual hexagonal prism columns into a tightly connected irregular column. Increasing film density leads to higher hardness. Sufficient synchronized negative substrate biasing and longer pulse width, which supports higher mobility of adatoms, causes the preferred orientation of hexagonal α-phase Zr films from (0 0 0 2) to (1 0 1¯ 1). Unlike the deposition at 1.2 Pa, highly charged ions are also found during the short HiPIMS pulse width at 0.8 Pa argon.

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