Intra-Cavity Loss Element Method for Measurement of the Small Signal Gain of a TEA CO2 Laser

2012 ◽  
Vol 2 (4) ◽  
pp. 58-60
Author(s):  
M Aram ◽  
◽  
Z Porhasannejad ◽  
E Aghayare ◽  
S Behrouzinia
Keyword(s):  
Co2 Laser ◽  
Tea Co2 Laser ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Cavity Loss ◽  
Element Method

Small signal gain and uniformity measurement in e-beam controlled CO2 laser amplifiers

1981 ◽  
Vol 13 (4) ◽  
pp. 210-212 ◽  
Author(s):  
U. Bizzarri ◽  
G. Messina ◽  
L. Picardi ◽  
A. Vignati
Keyword(s):  
Co2 Laser ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Laser Amplifiers

Effects of foreign gas on the small signal gain of a thermally pumped CO2 laser

1978 ◽  
Vol 27 (3) ◽  
pp. 415-418 ◽  
Author(s):  
Hiroshi Hara ◽  
Sadahiko Nakao ◽  
Akira Fujisawa
Keyword(s):  
Co2 Laser ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain

A high-power transverse-flow cw CO2 laser-output and small-signal gain measurements

1986 ◽  
Vol 41 (4) ◽  
pp. 245-250 ◽  
Author(s):  
J. Stańco ◽  
Z. Rozkwitalski ◽  
G. Sliwiński ◽  
J. Konefał ◽  
P. Kukiełło ◽  
...  
Keyword(s):  
Co2 Laser ◽  
High Power ◽  
Transverse Flow ◽  
Laser Output ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Cw Co2 Laser

Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
Small Signal Gain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Saturated Output Power

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

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