scholarly journals Bias Voltage Dependence of “Work Function ” at Nanometer-Scale by Scanning Tunneling Microscope

2002 ◽  
Vol 9 (4) ◽  
pp. 488-500
Author(s):  
Shinjiro Yagyu ◽  
Michiko Yoshitake
Keyword(s):  
Work Function ◽  
Bias Voltage ◽  
Scanning Tunneling Microscope ◽  
Voltage Dependence ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscope ◽  
Bias Voltage Dependence

Nanometer‐scale hole formation on graphite using a scanning tunneling microscope

1989 ◽  
Vol 55 (17) ◽  
pp. 1727-1729 ◽  
Author(s):  
T. R. Albrecht ◽  
M. M. Dovek ◽  
M. D. Kirk ◽  
C. A. Lang ◽  
C. F. Quate ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Hole Formation ◽  
Tunneling Microscope

Real-Space Imaging of Nanoscale Electrodeposited Ceramic Superlattices in the Scanning Tunneling Microscope

1992 ◽  
Vol 286 ◽  
Author(s):  
Teresa D. Golden ◽  
Ryne P. Raffaelle ◽  
Richard J. Phillips ◽  
Jay A. Switzer
Keyword(s):  
Cross Sections ◽  
Scanning Tunneling Microscope ◽  
Real Space ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
X Ray Diffraction ◽  
Ceramic Oxides ◽  
Tunneling Microscope ◽  
Stm Images ◽  
Modulation Wavelength

ABSTRACTWe have imaged fractured cross-sections of electrodeposited ceramic oxides based on the TI-Pb-O system using a scanning tunneling microscope. The goal of this work is to measure both the modulation wavelength and compositional profile of the superlattices by mapping out the electronic properties in real space on a nanometer scale. Fourier analysis was done on STM images of all superlattices to yield the modulation wavelength. The modulation wavelength from STM was then compared with those obtained, by Faraday calculation and x-ray diffraction. The STM can be used to design “better” superlattices. We have found that the composition profile in superlattices deposited by modulating the potential was more square than in superlattices deposited by modulating the current.

Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Evoy ◽  
C. K. Harnett ◽  
S. Keller ◽  
U. K. Mishra ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Scanning Tunneling Microscope ◽  
Multiple Quantum Well ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Multiple Quantum ◽  
Proof Of Concept ◽  
Cross Sectional ◽  
Tunneling Microscope ◽  
Nm Range

AbstractWe present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of Ld=30–55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30–100 nm wide smooth fluctuations of luminescence.

Nanometer‐scale modification and characterization of lead‐telluride surface by scanning tunneling microscope at 4.2 K

1996 ◽  
Vol 79 (5) ◽  
pp. 2435-2438
Author(s):  
D. N. Davydov ◽  
Yu. B. Lyanda‐Geller ◽  
S. A. Rykov ◽  
H. Hancotte ◽  
R. Deltour ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Lead Telluride ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscope

scholarly journals Characteristics of sulfur atoms adsorbed on Ag(100), Ag(110), and Ag(111) as probed with scanning tunneling microscopy: experiment and theory

2019 ◽  
Vol 21 (20) ◽  
pp. 10540-10551 ◽  
Author(s):  
Peter M. Spurgeon ◽  
Da-Jiang Liu ◽  
Holly Walen ◽  
Junepyo Oh ◽  
Hyun Jin Yang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Bias Voltage ◽  
Voltage Dependence ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Scanning Tunneling Microscopy Experiment ◽  
Bias Voltage Dependence

Sulfur atoms on Ag(100) exhibit bias voltage dependence.

Application of various modes of scanning-probe microscopies in polymer systems

1996 ◽  
Vol 54 ◽  
pp. 196-197
Author(s):  
Dale J. Meier
Keyword(s):  
Scanning Tunneling Microscope ◽  
Molecular Level ◽  
Contact Forces ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Polymer Systems ◽  
Tunneling Microscope ◽  
Atomic Force ◽  
Cantilever Probe

The invention of the scanning tunneling microscope (STM) by Binnig and Rohrer in 1982 demonstrated an unparalleled ability to image materials at the sub-nanometer scale. The invention rapidly lead to an explosion of applications of STM in a wide variety of fields. However, imaging by an STM is essentially limited to materials which are conductive, or could be made conductive, so many materials of interest could not be imaged by STM. This limitation was removed a few years later (1985) by the invention of the atomic force microscope (AFM) by Binnig, Quate and Gerber, in which imaging is based on the response of a soft cantilever beam to the contact forces between an ultra-fine probe tip and a sample. The cantilever/probe systems could be made sensitive enough to enable the AFM to easily resolve atomic or molecular level features.

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