Nanometer‐scale modification and characterization of lead‐telluride surface by scanning tunneling microscope at 4.2 K

1996 ◽  
Vol 79 (5) ◽  
pp. 2435-2438
Author(s):  
D. N. Davydov ◽  
Yu. B. Lyanda‐Geller ◽  
S. A. Rykov ◽  
H. Hancotte ◽  
R. Deltour ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Lead Telluride ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscope

Nanometer‐scale hole formation on graphite using a scanning tunneling microscope

1989 ◽  
Vol 55 (17) ◽  
pp. 1727-1729 ◽  
Author(s):  
T. R. Albrecht ◽  
M. M. Dovek ◽  
M. D. Kirk ◽  
C. A. Lang ◽  
C. F. Quate ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Hole Formation ◽  
Tunneling Microscope

Kelvin probe and scanning tunneling microscope characterization of Langmuir–Blodgett sapphyrin films

1999 ◽  
Vol 75 (9) ◽  
pp. 1237-1239 ◽  
Author(s):  
C. Goletti ◽  
A. Sgarlata ◽  
N. Motta ◽  
P. Chiaradia ◽  
R. Paolesse ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Kelvin Probe ◽  
Tunneling Microscope ◽  
Langmuir Blodgett

Real-Space Imaging of Nanoscale Electrodeposited Ceramic Superlattices in the Scanning Tunneling Microscope

1992 ◽  
Vol 286 ◽  
Author(s):  
Teresa D. Golden ◽  
Ryne P. Raffaelle ◽  
Richard J. Phillips ◽  
Jay A. Switzer
Keyword(s):  
Cross Sections ◽  
Scanning Tunneling Microscope ◽  
Real Space ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
X Ray Diffraction ◽  
Ceramic Oxides ◽  
Tunneling Microscope ◽  
Stm Images ◽  
Modulation Wavelength

ABSTRACTWe have imaged fractured cross-sections of electrodeposited ceramic oxides based on the TI-Pb-O system using a scanning tunneling microscope. The goal of this work is to measure both the modulation wavelength and compositional profile of the superlattices by mapping out the electronic properties in real space on a nanometer scale. Fourier analysis was done on STM images of all superlattices to yield the modulation wavelength. The modulation wavelength from STM was then compared with those obtained, by Faraday calculation and x-ray diffraction. The STM can be used to design “better” superlattices. We have found that the composition profile in superlattices deposited by modulating the potential was more square than in superlattices deposited by modulating the current.

Characterization of molecular overlayers on metal surface in dynamic equilibrium by scanning tunneling microscope

2001 ◽  
Vol 393 (1-2) ◽  
pp. 325-328 ◽  
Author(s):  
Hitoshi Suzuki ◽  
Simon Berner ◽  
Michael Brunner ◽  
Hisao Yanagi ◽  
Derck Schlettwein ◽  
...  
Keyword(s):  
Metal Surface ◽  
Scanning Tunneling Microscope ◽  
Dynamic Equilibrium ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Evoy ◽  
C. K. Harnett ◽  
S. Keller ◽  
U. K. Mishra ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Scanning Tunneling Microscope ◽  
Multiple Quantum Well ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Multiple Quantum ◽  
Proof Of Concept ◽  
Cross Sectional ◽  
Tunneling Microscope ◽  
Nm Range

AbstractWe present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of Ld=30–55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30–100 nm wide smooth fluctuations of luminescence.

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