Combination of High-Resolution RBS and Angle-Resolved XPS: Accurate Depth Profiling of Chemical States

2009 ◽  
Vol 15 (3) ◽  
pp. 225-228
Author(s):  
Kaoru Nakajima ◽  
Kenji Kimura ◽  
Thierry Conard ◽  
Wilfried Vandervorst
Keyword(s):  
High Resolution ◽  
Depth Profiling ◽  
Chemical States

scholarly journals Combination of high-resolution RBS and angle-resolved XPS: accurate depth profiling of chemical states

2008 ◽  
Vol 40 (3-4) ◽  
pp. 423-426 ◽  
Author(s):  
Kenji Kimura ◽  
Kaoru Nakajima ◽  
Ming Zhao ◽  
Hiroshi Nohira ◽  
Takeo Hattori ◽  
...  
Keyword(s):  
High Resolution ◽  
Depth Profiling ◽  
Chemical States

Ion Beam Sputtering for High Resolution Depth Profiling

2009 ◽  
Vol 15 (3) ◽  
pp. 216-219 ◽  
Author(s):  
Hee Jae Kang ◽  
Dae Won Moon ◽  
Hyung-Ik Lee
Keyword(s):  
High Resolution ◽  
Ion Beam ◽  
Depth Profiling ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Site-specific chemical states of adsorbed CO on Pt(997): A high resolution XPS study

2013 ◽  
Vol 608 ◽  
pp. 220-225 ◽  
Author(s):  
Sumera Shimizu ◽  
Hiroyuki Noritake ◽  
Takanori Koitaya ◽  
Kozo Mukai ◽  
Shinya Yoshimoto ◽  
...  
Keyword(s):  
High Resolution ◽  
Specific Chemical ◽  
Site Specific ◽  
Chemical States ◽  
Adsorbed Co ◽  
Xps Study

The ultra-high resolution depth profiling reference material - Ta2O5 anodically grown on Ta

1984 ◽  
Vol 139 (2-3) ◽  
pp. A136-A137
Author(s):  
M.P. Seah ◽  
H.J. Mathieu ◽  
C.P. Hunt
Keyword(s):  
High Resolution ◽  
Reference Material ◽  
Depth Profiling

Study of Ta as a Diffusion Barrier in Cu/SiO2 Structure

2000 ◽  
Vol 612 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
J. W. Chai ◽  
J. H. Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Depth Profiling ◽  
Oxide Formation ◽  
X Ray ◽  
Chemical States ◽  
The Stability

AbstractTantalum (Ta) thin films of 35 nm thickness were investigated as diffusion barriers as well as adhesion-promoting layers between Cu and SiO2 using X-ray diffractometry (XRD), Scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). After annealing at 600°C for 1h in vacuum, no evidence of interdiffusion was observed. However, XPS depth profiling indicates that elemental Si appears at the Ta/SiO2 interface after annealing. In-situ XPS studies show that the Ta/SiO2 interface was stable until 500°C, but about 32% of the interfacial SiO2 was reduced to elemental Si at 600°C. Upon cooling to room temperature, some elemental Si recombined to form SiO2 again, leaving only 6.5% elemental Si. Comparative studies on the interface chemical states of Cu/SiO2 and Ta/SiO2 indicate that the stability of the Cu/Ta/SiO2/Si system may be ascribed to the strong bonding of Ta and SiO2, due to the reduction of SiO2 through Ta oxide formation.

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