scholarly journals Combined Multi-technique XPS System Focusing on Low Energy Inverse Photoelectron Spectroscopy and Ultraviolet Photoelectron Spectroscopy

2021 ◽  
Vol 64 (11) ◽  
pp. 504-509
Author(s):  
Masahiro TERASHIMA ◽  
Takuya MIYAYAMA ◽  
Tetsuro SHIRAO ◽  
Hin Wai MO ◽  
Yasuhiro HATAE ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

2005 ◽  
Vol 483-485 ◽  
pp. 547-550 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surface Band ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Different Temperatures ◽  
Low Energy Electron

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.

Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation

2010 ◽  
Vol 645-648 ◽  
pp. 593-596
Author(s):  
Ameer Al-Temimy ◽  
Christian Riedl ◽  
Ulrich Starke
Keyword(s):  
Photoelectron Spectroscopy ◽  
Epitaxial Graphene ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Force Microscopy ◽  
Low Energy Electron Diffraction ◽  
Atomic Force ◽  
Graphene Lattice ◽  
Low Energy Electron

By carbon evaporation under ultrahigh vacuum (UHV) conditions, epitaxial graphene can be grown on SiC(0001) at significantly lower temperatures than with conventional Si sublimation. Therefore, the degradation of the initial SiC surface morphology can be avoided. The layers of graphene are characterized by low energy electron diffraction (LEED), angle resolved ultraviolet photoelectron spectroscopy (ARUPS), and atomic force microscopy (AFM). On SiC the graphene lattice is rotated by 30o in comparison to preparation by annealing in UHV alone.

Surface potential of liquid microjet investigated using extreme ultraviolet photoelectron spectroscopy

2020 ◽  
Vol 152 (14) ◽  
pp. 144503
Author(s):  
Junichi Nishitani ◽  
Shutaro Karashima ◽  
Christopher W. West ◽  
Toshinori Suzuki
Keyword(s):  
Surface Potential ◽  
Photoelectron Spectroscopy ◽  
Extreme Ultraviolet ◽  
Ultraviolet Photoelectron Spectroscopy
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