Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy

2008 ◽  
Vol 93 (3) ◽  
pp. 033106 ◽  
Author(s):  
C. Riedl ◽  
A. A. Zakharov ◽  
U. Starke
Keyword(s):  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Epitaxial Graphene ◽  
Low Energy ◽  
Energy Electron ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Graphene Layers ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

2005 ◽  
Vol 483-485 ◽  
pp. 547-550 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surface Band ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Different Temperatures ◽  
Low Energy Electron

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.

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