scholarly journals In Situ Study on Oxygen Etching of Surface Buffer Layer on SiC(0001) Terraces

2017 ◽  
Vol 15 (0) ◽  
pp. 13-18 ◽  
Author(s):  
Chenxing Wang ◽  
Hitoshi Nakahara ◽  
Yahachi Saito
Keyword(s):  
Buffer Layer ◽  
Oxygen Etching

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

In-Situ Laser Processing and Microstructural Characteristics of YBa2Cu3O7−δ Thin Films on Si with TiN Buffer Layer

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
T. Zheleva ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transition Temperature ◽  
Buffer Layer ◽  
Processing Parameters ◽  
Superconducting Transition ◽  
Epitaxial Relationship ◽  
Ybco Thin Films ◽  
Zero Resistance

ABSTRACTWe have prepared high-quality superconducting YBa2Cu3O7−δ (YBCO) thin films on Si(100) with TiN as a buffer layer using in-situ multitarget deposition system. Both TiN and YBCO thin films were deposited sequentially by KrF excitner laser ( λ = 248 nm ) at substrate temperature of 650°C. Thin films were characterized using X-ray diffraction (XRD), four-point-probe ac resistivity, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Rutherford backscattering (RBS). The TiN buffer layer was epitaxial and the epitaxial relationship was found to be cube on cube with <100> TiN // <100> Si. YBCO thin films on Si with TiN buffer layer showed the transition temperature of 90–92K with Tco (zero resistance temperature) of ∼84K. We have found that the quality of the buffer layer is very important in determining the superconducting transition temperature of the thin film. The effects of processing parameters and the correlation of microstructural features with superconducting properties are discussed indetail.

In Situ Formation of Ag2MoO4 in a Ag/MoO3 Buffer Layer Enables Highly Efficient Inverted Perovskite Cell for a Tandem Structure

2020 ◽  
Vol 3 (10) ◽  
pp. 9742-9749
Author(s):  
Zilong Wang ◽  
Di Lu ◽  
Jingjing Jiang ◽  
Weibo Yan ◽  
Yuancai Gong ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Highly Efficient ◽  
Tandem Structure ◽  
In Situ Formation

In Situ Analysis of the Zn(S,O) Buffer Layer Preparation for Chalcopyrite Solar Cells by Zn L-edge X-Ray Absorption Spectroscopy

ChemPhysChem ◽  
2009 ◽  
Vol 10 (3) ◽  
pp. 532-535 ◽  
Author(s):  
Iver Lauermann ◽  
Timo Kropp ◽  
Damien Vottier ◽  
Ahmed Ennaoui ◽  
Wolfgang Eberhardt ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Absorption Spectroscopy ◽  
In Situ Analysis ◽  
X Ray ◽  
X Ray Absorption

Properties of in-situ laser-pulsed deposited YBCO thin films on MgO with SrTiO3 buffer layer

1996 ◽  
Vol 260 (1-2) ◽  
pp. 111-116 ◽  
Author(s):  
V. Boffa ◽  
T. Petrisor ◽  
L. Ciontea ◽  
U. Gambardella ◽  
S. Barbanera
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Ybco Thin Films

In situ growth of columnar MoO3 buffer layer for organic photovoltaic applications

2014 ◽  
Vol 15 (1) ◽  
pp. 29-34 ◽  
Author(s):  
Guojie Wang ◽  
Tonggang Jiu ◽  
Pandeng Li ◽  
Jun Li ◽  
Chunming Sun ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Organic Photovoltaic ◽  
In Situ Growth ◽  
Photovoltaic Applications

Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (46) ◽  
pp. 10721-10727 ◽  
Author(s):  
Fangliang Gao ◽  
Lei Wen ◽  
Yunfang Guan ◽  
Jingling Li ◽  
Xiaona Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Si Substrate ◽  
Structural Perfection ◽  
High Degree

The as-grown In0.53Ga0.47As epi-layer grown on Si substrate by using low-temperature In0.4Ga0.6As buffer layer with in-situ annealing is of a high degree of structural perfection.

Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer

2009 ◽  
Vol 6 (S2) ◽  
pp. S352-S355 ◽  
Author(s):  
Frank Lipskil ◽  
Sarad B. Thapa ◽  
Joachim Hertkorn ◽  
Thomas Wunderer ◽  
Stephan Schwaiger ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Zno Buffer Layer
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