scholarly journals A Lattice Model for Thermal Decoration and Step Bunching in Vicinal Surface with Sub-Monolayer Adsorbates

2009 ◽  
Vol 7 ◽  
pp. 39-44 ◽  
Author(s):  
Noriko Akutsu ◽  
Hiroki Hibino ◽  
Takao Yamamoto
Keyword(s):  
Lattice Model ◽  
Vicinal Surface ◽  
Step Bunching

Step Bunching during SiGe Growth on Vicinal Si(111) Surfaces

1999 ◽  
Vol 584 ◽  
Author(s):  
H. Hibino ◽  
T. Ogino
Keyword(s):  
Misorientation Angle ◽  
Growth Temperature ◽  
Diffusion Length ◽  
Vicinal Surface ◽  
Step Bunching ◽  
Terrace Width

AbstractWe investigate step bunching during SiGe growth on vicinal Si(111) surfaces. Step bunching occurs irrespective of the misorientation angle and direction of the vicinal surface, the growth temperature, and the Ge concentration. At 550°C, the average number of the steps in the bunch increases with the Ge concentration. After growth of 10-nm-thick SiGe layers, twodimensional islands are formed on the terraces, which indicates that the terrace width has already been saturated. Therefore, the terrace width is mainly determined by the diffusion length of the adatom. The average number of steps in the bunch increases with the Ge concentration because the diffusion length increases with the Ge concentration. The diffusion length also increases with the temperature. So the higher the temperature is, the larger the step bunch becomes.

Thermal step bunching and interstep attraction on the vicinal surface with adsorption

2003 ◽  
Vol 67 (12) ◽  
Author(s):  
Noriko Akutsu ◽  
Yasuhiro Akutsu ◽  
Takao Yamamoto
Keyword(s):  
Vicinal Surface ◽  
Step Bunching

Step bunching to step-meandering transition induced by electromigration on Si(111) vicinal surface

2009 ◽  
Vol 603 (3) ◽  
pp. 507-512 ◽  
Author(s):  
F. Leroy ◽  
D. Karashanova ◽  
M. Dufay ◽  
J.-M. Debierre ◽  
T. Frisch ◽  
...  
Keyword(s):  
Vicinal Surface ◽  
Step Bunching

Cu induced step bunching on a Si(111) vicinal surface studied by reflection electron microscopy

1999 ◽  
Vol 433-435 ◽  
pp. 512-516 ◽  
Author(s):  
Y. Takahashi ◽  
H. Minoda ◽  
Y. Tanishiro ◽  
K. Yagi
Keyword(s):  
Electron Microscopy ◽  
Vicinal Surface ◽  
Step Bunching ◽  
Reflection Electron Microscopy

Rem Study of Current Effect on the Structure of Clean Si(111) Surface

1990 ◽  
Vol 48 (1) ◽  
pp. 306-307
Author(s):  
A. Yamanaka ◽  
H. Ohse ◽  
K. Yagi
Keyword(s):  
The Other ◽  
Current Direction ◽  
Clean Surface ◽  
Current Effect ◽  
Atomic Steps ◽  
Step Bunching ◽  
Terrace Width ◽  
Step Down ◽  
A Current

Recently current effects on clean and metal adsorbate surfaces have attracted much attention not only because of interesting phenomena but also because of practically importance in treatingclean and metal adsorbate surfaces [1-6]. In the former case, metals deposited migrate on the deposit depending on the current direction and a patch of the deposit expands on the clean surface [1]. The migration is closely related to the adsorbate structures and substrate structures including their anisotropy [2,7]. In the latter case, configurations of surface atomic steps depends on the current direction. In the case of Si(001) surface equally spaced array of monatom high steps along the [110] direction produces the 2x1 and 1x2 terraces. However, a relative terrace width of the two domain depends on the current direction; a step-up current widen terraces on which dimers are parallel to the current, while a step-down current widen the other terraces [3]. On (111) surface, a step-down current produces step bunching at temperatures between 1250-1350°C, while a step-up current produces step bunching at temperatures between 1050-1250°C [5].In the present paper, our REM observations on a current induced step bunching, started independently, are described.Our results are summarized as follows.(1) Above around 1000°C a step-up current induces step bunching. The phenomenon reverses around 1200 C; a step-down current induces step bunching. The observations agree with the previous reports [5].

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