scholarly journals Probing bulk carrier transport, interfacial disorders, and orientations of organic semiconductors in a thin film transistor configuration

2014 ◽  
Author(s):  
S.K. So ◽  
Wai-Yu Sit ◽  
Cyrus Y.M. Chan
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Carrier Transport ◽  
Thin Film Transistor ◽  
Bulk Carrier

p-Channel Organic Semiconductors Based on Hybrid Acene−Thiophene Molecules for Thin-Film Transistor Applications

2005 ◽  
Vol 127 (11) ◽  
pp. 3997-4009 ◽  
Author(s):  
Jeffrey A. Merlo ◽  
Christopher R. Newman ◽  
Christopher P. Gerlach ◽  
Tommie W. Kelley ◽  
Dawn V. Muyres ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Thin Film Transistor

Illumination Effect on Electrical Characteristics of Poly(3-hexylthiophene): TIPS-Pentacene Blend Thin-Film Transistor

2021 ◽  
Vol 21 (7) ◽  
pp. 3829-3834
Author(s):  
Hyunji Shin ◽  
Jaehoon Park ◽  
Jong Sun Choi
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Incident Light ◽  
Thin Film Transistor ◽  
Electrical Characteristics ◽  
Light Spectrum ◽  
Absorption Properties ◽  
Threshold Voltages ◽  
Component Material ◽  
Color Filters

Organic phototransistors capable of absorbing in the visible light spectrum without color filters are the best alternatives to conventional inorganic phototransistors. In this study, the effect of illumination on the electrical characteristics of a solution-processed poly(3-hexylthiophene): 6,13-bis(triisopropylsilylethynyl) pentacene-blend thin-film transistor (TFT) was investigated. The wavelengths of the irradiated light were determined from the absorbance spectrum of the blended film and changes in the transistor’s electrical characteristics were explained in relation to the electrical and light absorption properties of each component material. The photosensitivity and absorbing properties of the blended TFT were enhanced at 515 and 450 nm and exhibited positively shifted threshold voltages under incident light. The results indicated that the photo-generated exci-ton pair characteristics matched the absorbance properties of the blended material and that the absorption and photocurrent characteristics of the respective components could be combined. This process for the heterogeneous blending of organic semiconductors has the potential to improve phototransistor performance and contribute to the development of broadband absorbing phototransistors.

Molecular Dielectric Multilayers for Ultra-Low-Voltage Organic Thin Film Transistors

2005 ◽  
Vol 871 ◽  
Author(s):  
Myung-Han Yoon ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Layer By Layer ◽  
Organic Thin Film ◽  
Operating Characteristics ◽  
Threshold Voltages ◽  
Broad Variety ◽  
Organic Dielectric

AbstractVery thin (2.3 – 5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor (OTFT) structures to achieve sub-1 V operating characteristics. These new dielectrics are fabricated via layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well-defined, strongly-adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (400-700 nFcm-2). These multilayers enable OTFT function at very low source-drain, gate, and threshold voltages, and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.

Organic Semiconductors Derived from Dinaphtho-Fused s-Indacenes: How Molecular Structure and Film Morphology Influence Thin-Film Transistor Performance

2019 ◽  
Vol 31 (17) ◽  
pp. 6962-6970 ◽  
Author(s):  
Andrew M. Zeidell ◽  
Laura Jennings ◽  
Conerd K. Frederickson ◽  
Qianxiang Ai ◽  
Justin J. Dressler ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Thin Film ◽  
Organic Semiconductors ◽  
Thin Film Transistor ◽  
Film Morphology ◽  
Morphology Influence
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