Optical charge state manipulation of divacancy spins in silicon carbide under resonant excitation

2021 ◽  
Author(s):  
Junfeng Wang ◽  
Jiyang Zhou ◽  
qiang li ◽  
Feifei Yan ◽  
Mu Yang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Charge State ◽  
Resonant Excitation ◽  
Optical Charge

scholarly journals Optical charge state control of spin defects in 4H-SiC

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Gary Wolfowicz ◽  
Christopher P. Anderson ◽  
Andrew L. Yeats ◽  
Samuel J. Whiteley ◽  
Jens Niklas ◽  
...  
Keyword(s):  
Charge State ◽  
State Control ◽  
Optical Charge

Charge-state transitions of muonium in 6H silicon carbide

2007 ◽  
Vol 401-402 ◽  
pp. 631-634 ◽  
Author(s):  
H.N. Bani-Salameh ◽  
A.G. Meyer ◽  
B.R. Carroll ◽  
R.L. Lichti ◽  
Y.G. Celebi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Charge State ◽  
State Transitions

scholarly journals Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Nano Letters ◽  
2019 ◽  
Vol 19 (10) ◽  
pp. 7173-7180 ◽  
Author(s):  
Matthias Widmann ◽  
Matthias Niethammer ◽  
Dmitry Yu. Fedyanin ◽  
Igor A. Khramtsov ◽  
Torsten Rendler ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Charge State ◽  
Optoelectronic Device ◽  
Electrical Charge

Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide

Nano Letters ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 6142-6147
Author(s):  
Zhao Mu ◽  
Soroush Abbasi Zargaleh ◽  
Hans Jürgen von Bardeleben ◽  
Johannes E. Fröch ◽  
Milad Nonahal ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Resonant Excitation ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Centers ◽  
Single Emitter ◽  
Coherent Manipulation

scholarly journals Stark tuning and electrical charge state control of single divacancies in silicon carbide

2017 ◽  
Vol 111 (26) ◽  
pp. 262403 ◽  
Author(s):  
Charles F. de las Casas ◽  
David J. Christle ◽  
Jawad Ul Hassan ◽  
Takeshi Ohshima ◽  
Nguyen T. Son ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Charge State ◽  
Electrical Charge ◽  
State Control

Space Charge Waves in 6H-SiC and 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 537-540
Author(s):  
Alexander A. Lebedev ◽  
M. Lemmer ◽  
B. Hilling ◽  
M. Wohlecke ◽  
Mirco Imlau ◽  
...  
Keyword(s):  
Experimental Data ◽  
Silicon Carbide ◽  
Charge Density ◽  
Space Charge ◽  
Charge Density Waves ◽  
Resonant Excitation ◽  
Stacking Sequence ◽  
Density Waves ◽  
Light Pattern ◽  
Space Charge Waves

Resonant excitation of space charge waves (SCW) by means of an oscillating light pattern has been investigated in hexagonal silicon carbide with 4H and 6H stacking sequence. The experimental data can be explained by the existence of trap recharging waves in the 4H-SiC sample and damped forced charge-density waves in the 6H-SiC sample.

scholarly journals Charge state control of the silicon vacancy and divacancy in silicon carbide

2021 ◽  
Vol 129 (21) ◽  
pp. 215702
Author(s):  
Nguyen T. Son ◽  
Ivan G. Ivanov
Keyword(s):  
Silicon Carbide ◽  
Charge State ◽  
State Control ◽  
Silicon Vacancy

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Microstructural Evaluation of Silicon Carbide Whisker Reinforced Alumina Fabricated with Carbon-Coated Whiskers

1991 ◽  
Vol 49 ◽  
pp. 920-921
Author(s):  
K. B. Alexander ◽  
P. F. Becher
Keyword(s):  
Silicon Carbide ◽  
High Resolution Electron Microscopy ◽  
Ceramic Composites ◽  
Interface Debonding ◽  
Resolution Electron ◽  
Microstructural Evaluation ◽  
Carbon Coated ◽  
Electron Energy Loss ◽  
Interfacial Films ◽  
Debonding Process

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.

TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

1995 ◽  
Vol 53 ◽  
pp. 350-351
Author(s):  
L. A. Giannuzzi ◽  
C. A. Lewinsohn ◽  
C. E. Bakis ◽  
R. E. Tressler
Keyword(s):  
Silicon Carbide ◽  
Creep Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Primary Creep ◽  
Excess Carbon ◽  
Silicon Carbide Fibers ◽  
Sic Fiber ◽  
Carbon Core ◽  
Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

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