scholarly journals Charge state control of the silicon vacancy and divacancy in silicon carbide

2021 ◽  
Vol 129 (21) ◽  
pp. 215702
Author(s):  
Nguyen T. Son ◽  
Ivan G. Ivanov
Keyword(s):  
Silicon Carbide ◽  
Charge State ◽  
State Control ◽  
Silicon Vacancy

scholarly journals Stark tuning and electrical charge state control of single divacancies in silicon carbide

2017 ◽  
Vol 111 (26) ◽  
pp. 262403 ◽  
Author(s):  
Charles F. de las Casas ◽  
David J. Christle ◽  
Jawad Ul Hassan ◽  
Takeshi Ohshima ◽  
Nguyen T. Son ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Charge State ◽  
Electrical Charge ◽  
State Control

Charge State Control of Molecules Reveals Modification of the Tunneling Barrier with Intramolecular Contrast

Nano Letters ◽  
2011 ◽  
Vol 11 (4) ◽  
pp. 1580-1584 ◽  
Author(s):  
Ingmar Swart ◽  
Tobias Sonnleitner ◽  
Jascha Repp
Keyword(s):  
Charge State ◽  
State Control ◽  
Tunneling Barrier

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

Stark Tuning of the Silicon Vacancy in Silicon Carbide

Nano Letters ◽  
2019 ◽  
Vol 20 (1) ◽  
pp. 658-663 ◽  
Author(s):  
Maximilian Rühl ◽  
Lena Bergmann ◽  
Michael Krieger ◽  
Heiko B. Weber
Keyword(s):  
Silicon Carbide ◽  
Silicon Vacancy

The Silicon Vacancy in SiC

2009 ◽  
Vol 615-617 ◽  
pp. 347-352 ◽  
Author(s):  
Erik Janzén ◽  
Adam Gali ◽  
Patrick Carlsson ◽  
Andreas Gällström ◽  
Björn Magnusson ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Charge State ◽  
Negative Charge ◽  
Final States ◽  
Photoluminescence Spectra ◽  
Silicon Vacancy

A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.

scholarly journals Optical charge state control of spin defects in 4H-SiC

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Gary Wolfowicz ◽  
Christopher P. Anderson ◽  
Andrew L. Yeats ◽  
Samuel J. Whiteley ◽  
Jens Niklas ◽  
...  
Keyword(s):  
Charge State ◽  
State Control ◽  
Optical Charge

scholarly journals Charge State Control Of Single InAs∕GaAs Quantum Dots By Means Of An External Magnetic Field

2010 ◽  
Author(s):  
L. A. Larsson ◽  
E. S. Moskalenko ◽  
M. Larsson ◽  
P. O. Holtz ◽  
Marília Caldas ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
External Magnetic Field ◽  
Charge State ◽  
State Control

Static and Dynamic Stark Tuning of the Silicon Vacancy in Silicon Carbide

2020 ◽  
Author(s):  
Alexander D. White ◽  
Daniil M. Lukin ◽  
Melissa A. Guidry ◽  
Rahul Trivedi ◽  
Naoya Morioka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Vacancy

Charge-state transitions of muonium in 6H silicon carbide

2007 ◽  
Vol 401-402 ◽  
pp. 631-634 ◽  
Author(s):  
H.N. Bani-Salameh ◽  
A.G. Meyer ◽  
B.R. Carroll ◽  
R.L. Lichti ◽  
Y.G. Celebi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Charge State ◽  
State Transitions
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