Achieving high-responsivity near-infrared detection at room temperature by nano-Schottky junction arrays via a black silicon/platinum contact approach

2021 ◽  
Vol 9 (7) ◽  
pp. 1324
Author(s):  
Fei Hu ◽  
Li Wu ◽  
Xiyuan Dai ◽  
Shuai Li ◽  
Ming Lu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Near Infrared ◽  
Infrared Detection ◽  
Schottky Junction ◽  
Black Silicon ◽  
High Responsivity ◽  
Junction Arrays

High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction

2019 ◽  
Vol 5 (6) ◽  
pp. 1800957 ◽  
Author(s):  
Kyoung Eun Chang ◽  
Cihyun Kim ◽  
Tae Jin Yoo ◽  
Min Gyu Kwon ◽  
Sunwoo Heo ◽  
...  
Keyword(s):  
Near Infrared ◽  
Schottky Junction ◽  
Infrared Photodetector ◽  
High Responsivity

A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm

2018 ◽  
Vol 6 (18) ◽  
pp. 4861-4865 ◽  
Author(s):  
Yuange Wang ◽  
Xiaowen Huang ◽  
Di Wu ◽  
Ranran Zhuo ◽  
Enping Wu ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Near Infrared ◽  
Response Speed ◽  
Fast Response ◽  
Infrared Photodetectors ◽  
Infrared Photodetector ◽  
High Responsivity ◽  
Specific Detectivity

High-performance room-temperature infrared photodetectors based on MoS2/CdTe p–n heterojunction with broadband response, high responsivity, specific detectivity as well as fast response speed were demonstrated.

scholarly journals High-performance near-infrared photodetectors based on gate-controlled graphene–germanium Schottky junction with split active junction

Nanophotonics ◽  
2022 ◽  
Vol 0 (0) ◽  
Author(s):  
Cihyun Kim ◽  
Tae Jin Yoo ◽  
Min Gyu Kwon ◽  
Kyoung Eun Chang ◽  
Hyeon Jun Hwang ◽  
...  
Keyword(s):  
Dark Current ◽  
Interfacial Layer ◽  
High Performance ◽  
Near Infrared ◽  
Infrared Detection ◽  
Schottky Junction ◽  
Internal Electric Field ◽  
Detection Capability ◽  
Junction Device ◽  
Highly Sensitive

Abstract The structure of a gate-controlled graphene/germanium hybrid photodetector was optimized by splitting the active region to achieve highly sensitive infrared detection capability. The strengthened internal electric field in the split active junctions enabled efficient collection of photocarriers, resulting in a responsivity of 2.02 A W−1 and a specific detectivity of 5.28 × 1010 Jones with reduced dark current and improved external quantum efficiency; these results are more than doubled compared with the responsivity of 0.85 A W−1 and detectivity of 1.69 × 1010 Jones for a single active junction device. The responsivity of the optimized structure is 1.7, 2.7, and 39 times higher than that of previously reported graphene/Ge with Al2O3 interfacial layer, gate-controlled graphene/Ge, and simple graphene/Ge heterostructure photodetectors, respectively.

Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Electro-optical Applications

2010 ◽  
Author(s):  
Fred Semendy ◽  
Patrick Taylor ◽  
Gregory Meissner ◽  
Priyalal Wijewarnasuriya
Keyword(s):  
Silicon Germanium ◽  
Near Infrared ◽  
Black Silicon ◽  
Optical Applications

Near‐Infrared‐Excited Multicolor Afterglow in Carbon Dots‐Based Room‐Temperature Afterglow Materials

2021 ◽  
Author(s):  
Yihao Zheng ◽  
Haopeng Wei ◽  
Ping Liang ◽  
Xiaokai Xu ◽  
Xingcai Zhang ◽  
...  
Keyword(s):  
Carbon Dots ◽  
Room Temperature ◽  
Near Infrared
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