Mid-infrared 2 × 2 electro-optical switching by silicon and germanium three-waveguide and four-waveguide directional couplers using free-carrier injection

2014 ◽  
Vol 2 (5) ◽  
pp. 102 ◽  
Author(s):  
Richard Soref
Keyword(s):  
Optical Switching ◽  
Free Carrier ◽  
Carrier Injection ◽  
Directional Couplers ◽  
Mid Infrared ◽  
Silicon And Germanium

scholarly journals Silicon-on-insulator free-carrier injection modulators for the mid-infrared

2019 ◽  
Vol 44 (4) ◽  
pp. 915 ◽  
Author(s):  
M. Nedeljkovic ◽  
C. G. Littlejohns ◽  
A. Z. Khokhar ◽  
M. Banakar ◽  
W. Cao ◽  
...  
Keyword(s):  
Free Carrier ◽  
Silicon On Insulator ◽  
Carrier Injection ◽  
Mid Infrared

All-optical switching in microring devices by carrier injection

2003 ◽  
Author(s):  
T.A. Ibrahim ◽  
W. Cao ◽  
Y. Kim ◽  
J. Goldhar ◽  
P.-T. Ho ◽  
...  
Keyword(s):  
Optical Switching ◽  
Carrier Injection ◽  
All Optical ◽  
All Optical Switching

Amplitude and phase modulation by free-carrier injection in III–V semiconducting waveguides for the 106-μm wavelength

1987 ◽  
Vol 12 (11) ◽  
pp. 950 ◽  
Author(s):  
D. Delacourt ◽  
R. Blondeau ◽  
C. Brylinski ◽  
M. A. di Forte-Poisson ◽  
N. Herschkorn ◽  
...  
Keyword(s):  
Phase Modulation ◽  
Free Carrier ◽  
Carrier Injection

Mid-infrared, plasmonic switches and directional couplers induced by graphene sheets coupling system

2013 ◽  
Vol 104 (3) ◽  
pp. 37001 ◽  
Author(s):  
Hongju Li ◽  
Lingling Wang ◽  
Zhenrong Huang ◽  
Bin Sun ◽  
Xiang Zhai ◽  
...  
Keyword(s):  
Graphene Sheets ◽  
Directional Couplers ◽  
Mid Infrared ◽  
Coupling System ◽  
Plasmonic Switches

scholarly journals Thermal tuning capabilities of semiconductor metasurface resonators

Nanophotonics ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 331-338 ◽  
Author(s):  
Tomer Lewi ◽  
Nikita A. Butakov ◽  
Jon A. Schuller
Keyword(s):  
Optical Switching ◽  
Near Infrared ◽  
Large Temperature ◽  
Infrared Range ◽  
Thermal Excitation ◽  
Optical Elements ◽  
Silicon And Germanium ◽  
Phase Amplitude ◽  
External Stimuli ◽  
Thermal Tuning

AbstractMetasurfaces exploit optical phase, amplitude, and polarization engineering at subwavelength dimensions to achieve unprecedented control of light. The realization of all dielectric metasurfaces has led to low-loss flat optical elements with functionalities that cannot be achieved with metal elements. However, to reach their ultimate potential, metasurfaces must move beyond static operation and incorporate active tunability and reconfigurable functions. The central challenge is achieving large tunability in subwavelength resonator elements, which requires large optical effects in response to external stimuli. Here we study the thermal tunability of high-index silicon and germanium semiconductor resonators over a large temperature range. We demonstrate thermal tuning of Mie resonances due to the normal positive thermo-optic effect (dn/dT>0) over a wide infrared range. We show that at higher temperatures and longer wavelengths, the sign of the thermo-optic coefficient is reversed, culminating in a negative induced index due to thermal excitation of free carriers. We also demonstrate the tuning of high-order Mie resonances by several linewidths with a temperature swing of ΔT<100 K. Finally, we exploit the large near-infrared thermo-optic coefficient in Si metasurfaces to realize optical switching and tunable metafilters.

A numerical method for solving the physics-based model of IGBT with all free-carrier injection conditions in the base region

2017 ◽  
Vol 36 (6) ◽  
pp. 1653-1662 ◽  
Author(s):  
Jiajia Chen ◽  
Yuhan Ma ◽  
Shiyou Yang
Keyword(s):  
Mathematical Model ◽  
Numerical Model ◽  
Design Methodology ◽  
Free Carrier ◽  
Carrier Injection ◽  
Base Region ◽  
Content Type ◽  
Insulated Gate Bipolar Transistor ◽  
Proposed Model ◽  
Solution Methodology

Purpose The purpose of this paper is to provide an accurate model and method to simulate the transient performances of an insulated gate bipolar transistor (IGBT) in an arbitrary free-carrier injection condition. Design/methodology/approach A numerical model and method for solving the physics-based model, an ambipolar diffusion equation-based model, of an IGBT is proposed. Findings The results of the proposed model are very close to the tested ones. Originality/value A mathematical model for an IGBT considering all free-carrier injection conditions is introduced, and a numerical solution methodology is proposed.

Performance of the Active Microring Resonator Based on SOI Rib Waveguide

2012 ◽  
Vol 462 ◽  
pp. 375-379
Author(s):  
B. Mardiana ◽  
A.R. Hanim ◽  
H. Hazura ◽  
S. Shaari ◽  
P. Susthitha Menon ◽  
...  
Keyword(s):  
Refractive Index ◽  
Ring Resonator ◽  
Refractive Index Change ◽  
Electrical Signal ◽  
Free Carrier ◽  
Simulation Software ◽  
Microring Resonator ◽  
Silicon On Insulator ◽  
Carrier Injection ◽  
Rib Waveguide

Micro-ring resonator based on silicon-on-insulator (SOI) has been extensively studied due to its many advantages, thus promising to improve the optoelectronic integrated circuit performance. This paper highlights the study of the free carrier injection effect on the silicon rib waveguide with p-i-n diode structure integrated in the SOI micro-ring resonator. The free carrier concentrations have been modulated by the electrical signal that can cause change of refractive index of the micro-ring resonator. The device performances are predicted by using numerical modelling software 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the change of refractive index is maximized at a greater applied voltage. A shift in resonant wavelength of around 6.7 nm was predicted at 0.9V with 1.14x10-3refractive index change. It is also shown that 8.5dB change of the output response obtained through the output.

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