scholarly journals Room temperature slow light in a quantum-well waveguide via coherent population oscillation

2005 ◽  
Vol 13 (24) ◽  
pp. 9909 ◽  
Author(s):  
Phedon Palinginis ◽  
Forrest Sedgwick ◽  
Shanna Crankshaw ◽  
Michael Moewe ◽  
Connie J. Chang-Hasnain
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Slow Light ◽  
Population Oscillation ◽  
Coherent Population Oscillation

Slow Light Based on Coherent Population Oscillation in Quantum Dots at Room Temperature

2007 ◽  
Vol 43 (2) ◽  
pp. 196-205 ◽  
Author(s):  
Shu-Wei Chang ◽  
Piotr Konrad Kondratko ◽  
Hui Su ◽  
Shun Lien Chuang
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Slow Light ◽  
Population Oscillation ◽  
Coherent Population Oscillation

Analysis of quantum well size alteration effects on slow light device based on excitonic population oscillation

2013 ◽  
Vol 45 (9) ◽  
pp. 947-959 ◽  
Author(s):  
Hassan Kaatuzian ◽  
Hossein Shokri Kojori ◽  
Ashkan Zandi ◽  
Masoud Ataei
Keyword(s):  
Quantum Well ◽  
Slow Light ◽  
Population Oscillation

scholarly journals Effects of Quantum well Size Alteration on Excitonic Population Oscillation Slow Light Devices Properties

2013 ◽  
Vol 03 (02) ◽  
pp. 298-304 ◽  
Author(s):  
Hassan Kaatuzian ◽  
Hossein Shokri Kojori ◽  
Ashkan Zandi ◽  
Reza Kohandani
Keyword(s):  
Quantum Well ◽  
Slow Light ◽  
Population Oscillation

Slow Light in Semi-Conductor Quantum Well Waveguides

2008 ◽  
Author(s):  
Constance Chang-Hasnain ◽  
Hailin Wang ◽  
Shun-Lien Chuang ◽  
Philip Hemmer
Keyword(s):  
Quantum Well ◽  
Slow Light

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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