scholarly journals Epitaxial growth of GaP/AlGaP mirrors on Si for low thermal noise optical coatings

2015 ◽  
Vol 5 (8) ◽  
pp. 1890 ◽  
Author(s):  
Angie C. Lin ◽  
Riccardo Bassiri ◽  
Suraya Omar ◽  
Ashot S. Markosyan ◽  
Brian Lantz ◽  
...  
2006 ◽  
Vol 45 (7) ◽  
pp. 1569 ◽  
Author(s):  
Gregory M. Harry ◽  
Helena Armandula ◽  
Eric Black ◽  
D. R. M. Crooks ◽  
Gianpietro Cagnoli ◽  
...  

Author(s):  
G. M. HARRY ◽  
D. R. M. CROOKS ◽  
G. CAGNOLI ◽  
J. HOUGH ◽  
S. ROWAN ◽  
...  

2020 ◽  
Vol 59 (5) ◽  
pp. A229 ◽  
Author(s):  
M. Granata ◽  
A. Amato ◽  
G. Cagnoli ◽  
M. Coulon ◽  
J. Degallaix ◽  
...  

2002 ◽  
Vol 19 (5) ◽  
pp. 897-917 ◽  
Author(s):  
Gregory M Harry ◽  
Andri M Gretarsson ◽  
Peter R Saulson ◽  
Scott E Kittelberger ◽  
Steven D Penn ◽  
...  

2020 ◽  
Author(s):  
John Robinson ◽  
Eric Oelker ◽  
William Milner ◽  
Dhruv Kedar ◽  
Wei Zhang ◽  
...  

Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.


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