scholarly journals Perturbation of Au-assisted planar GaAs nanowire growth by p-type dopant impurities

2013 ◽  
Vol 3 (10) ◽  
pp. 1687 ◽  
Author(s):  
Ryan S. Dowdy ◽  
Chen Zhang ◽  
Parsian K. Mohseni ◽  
Seth A. Fortuna ◽  
Jian-Guo Wen ◽  
...  
Keyword(s):  
Nanowire Growth ◽  
Gaas Nanowire ◽  
P Type

scholarly journals Optimization of Ohmic Contacts to p-GaAs Nanowires

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Marcelo Rizzo Piton ◽  
Teemu Hakkarainen ◽  
Joonas Hilska ◽  
Eero Koivusalo ◽  
Donald Lupo ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Grazing Incidence ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Gaas Nanowires ◽  
Current Voltage ◽  
Metal Evaporation ◽  
Gaas Nanowire ◽  
P Type

AbstractThe performance of Ohmic contacts applied to semiconductor nanowires (NWs) is an important aspect for enabling their use in electronic or optoelectronic devices. Due to the small dimensions and specific surface orientation of NWs, the standard processing technology widely developed for planar heterostructures cannot be directly applied. Here, we report on the fabrication and optimization of Pt/Ti/Pt/Au Ohmic contacts for p-type GaAs nanowires grown by molecular beam epitaxy. The devices were characterized by current–voltage (IV) measurements. The linearity of the IV characteristics curves of individual nanowires was optimized by adjusting the layout of the contact metal layers, the surface treatment prior to metal evaporation, and post-processing thermal annealing. Our results reveal that the contact resistance is remarkably decreased when a Pt layer is deposited on the GaAs nanowire prior to the traditional Ti/Pt/Au multilayer layout used for p-type planar GaAs. These findings are explained by an improved quality of the metal-GaAs interface, which was evidenced by grazing incidence X-ray diffraction measurements in similar metallic thin films deposited on GaAs (110) substrates. In particular, we show that Ti exhibits low degree of crystallinity when deposited on GaAs (110) surface which directly affects the contact resistance of the NW devices. The deposition of a thin Pt layer on the NWs prior to Ti/Pt/Au results in a 95% decrease in the total electrical resistance of Be-doped GaAs NWs which is associated to the higher degree of crystallinity of Pt than Ti when deposited directly on GaAs (110).

scholarly journals GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE

2013 ◽  
Vol 24 (11) ◽  
pp. 115304 ◽  
Author(s):  
Keitaro Ikejiri ◽  
Fumiya Ishizaka ◽  
Katsuhiro Tomioka ◽  
Takashi Fukui
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Nanowire Growth ◽  
Silicon Thin Films ◽  
Selective Area ◽  
Gaas Nanowire

Solid-phase diffusion mechanism for GaAs nanowire growth

2004 ◽  
Vol 3 (10) ◽  
pp. 677-681 ◽  
Author(s):  
Ann I. Persson ◽  
Magnus W. Larsson ◽  
Stig Stenström ◽  
B. Jonas Ohlsson ◽  
Lars Samuelson ◽  
...  
Keyword(s):  
Solid Phase ◽  
Diffusion Mechanism ◽  
Nanowire Growth ◽  
Phase Diffusion ◽  
Gaas Nanowire

scholarly journals In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Carina B. Maliakkal ◽  
Daniel Jacobsson ◽  
Marcus Tornberg ◽  
Axel R. Persson ◽  
Jonas Johansson ◽  
...  
Keyword(s):  
Catalyst Particle ◽  
Nanowire Growth ◽  
Clear Understanding ◽  
X Ray ◽  
Catalyst Composition ◽  
Gaas Nanowires ◽  
Gaas Nanowire ◽  
First Time ◽  
Novel Structures

Abstract Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but the understanding is currently limited by a lack of empirical measurements of important parameters during growth, such as catalyst particle composition. However, this is difficult to accurately determine by investigating post-growth. We report direct in situ measurement of the catalyst composition during nanowire growth for the first time. We study Au-seeded GaAs nanowires inside an electron microscope as they grow and measure the catalyst composition using X-ray energy dispersive spectroscopy. The Ga content in the catalyst during growth increases with both temperature and Ga precursor flux.

Opportunities and pitfalls in patterned self-catalyzed GaAs nanowire growth on silicon

2013 ◽  
Vol 28 (10) ◽  
pp. 105025 ◽  
Author(s):  
Sandra J Gibson ◽  
Jonathan P Boulanger ◽  
Ray R LaPierre
Keyword(s):  
Nanowire Growth ◽  
Gaas Nanowire

scholarly journals Optical far-field extinction of a single GaAs nanowire towards in situ size control of aerotaxy nanowire growth

2020 ◽  
Vol 31 (13) ◽  
pp. 134001 ◽  
Author(s):  
Yang Chen ◽  
Nicklas Anttu ◽  
Sudhakar Sivakumar ◽  
Eleni Gompou ◽  
Martin H Magnusson
Keyword(s):  
Size Control ◽  
Nanowire Growth ◽  
Far Field ◽  
Gaas Nanowire

scholarly journals Solid-phase Diffusion Mechanism for GaAs Nanowire Growth

2005 ◽  
Vol 11 (S02) ◽  
Author(s):  
M W Larsson ◽  
A I Persson ◽  
L R Wallenberg ◽  
L Samuelson
Keyword(s):  
Solid Phase ◽  
Diffusion Mechanism ◽  
Nanowire Growth ◽  
Phase Diffusion ◽  
Gaas Nanowire
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