Direct optical wire bonding through open-to-air polymerization for silicon photonic chips

2021 ◽  
Author(s):  
Hyun-Woo Rhee ◽  
Joonsup Shim ◽  
Jae-Yong Kim ◽  
David Juseong Bang ◽  
Hyeonho Yoon ◽  
...  
Keyword(s):  
Wire Bonding ◽  
Silicon Photonic

scholarly journals Connecting Silicon Photonic Circuits to Multicore Fibers by Photonic Wire Bonding

2015 ◽  
Vol 33 (4) ◽  
pp. 755-760 ◽  
Author(s):  
Nicole Lindenmann ◽  
Stephan Dottermusch ◽  
Maria Laura Goedecke ◽  
Tobias Hoose ◽  
Muhammad Rodlin Billah ◽  
...  
Keyword(s):  
Wire Bonding ◽  
Photonic Circuits ◽  
Silicon Photonic ◽  
Photonic Wire

8-channel 448 Gbit/s Silicon Photonic Transmitter Enabled by Photonic Wire Bonding

2017 ◽  
Author(s):  
M. R. Billah ◽  
M. Blaicher ◽  
J. N. Kemal ◽  
T. Hoose ◽  
H. Zwickel ◽  
...  
Keyword(s):  
Wire Bonding ◽  
Silicon Photonic ◽  
Photonic Wire

scholarly journals Connecting silicon photonic circuits to multi-core fibers by photonic wire bonding

2014 ◽  
Author(s):  
N. Lindenmann ◽  
S. Dottermusch ◽  
T. Hoose ◽  
M. R. Billah ◽  
S. Koeber ◽  
...  
Keyword(s):  
Wire Bonding ◽  
Photonic Circuits ◽  
Silicon Photonic ◽  
Photonic Wire

HIGH DATA RATE SILICON PHOTONIC - CMOS ELECTRONIC MODULES USING COPPER MICROBUMPS

2015 ◽  
Vol 2015 (1) ◽  
pp. 000616-000620 ◽  
Author(s):  
S. Bernabé ◽  
G. Pares ◽  
B. Blampey ◽  
K. Rida ◽  
O. Castany ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Flip Chip ◽  
Photonic Integrated Circuits ◽  
Data Rate ◽  
Wire Bonding ◽  
High Density ◽  
High Data Rate ◽  
High Data ◽  
Silicon Photonic ◽  
Low Consumption

Achieving high data speed (typically Nx25 Gbps) compact optoelectronic modules is now made possible by using Photonic Integrated Circuits (PIC) combined with CMOS electronic drivers. Among the techniques that can be used to combine both circuits, flip-chip assembly based on micro-bumps shows several advantages, for example low RF parasitics and high density compared to wire bonding. Using this technique, it is possible to build low consumption photonic receivers working at 25 Gbps.

Ultra-Small Silicon Photonic Wire Waveguide Devices

2009 ◽  
Vol E92-C (2) ◽  
pp. 217-223 ◽  
Author(s):  
Tao CHU ◽  
Hirohito YAMADA ◽  
Shigeru NAKAMURA ◽  
Masashige ISHIZAKA ◽  
Masatoshi TOKUSHIMA ◽  
...  
Keyword(s):  
Waveguide Devices ◽  
Silicon Photonic ◽  
Photonic Wire

Slow-light Enhanced Nonlinear Optics in Silicon Photonic Crystal Waveguides

PIERS Online ◽  
2010 ◽  
Vol 6 (3) ◽  
pp. 273-278 ◽  
Author(s):  
David J. Moss ◽  
B. Corcoran ◽  
C. Monat ◽  
Christian Grillet ◽  
T. P. White ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Nonlinear Optics ◽  
Slow Light ◽  
Photonic Crystal Waveguides ◽  
Silicon Photonic

Failure Analysis on Power Trench MOSFET Devices with Copper Wire Bonds

2011 ◽  
Author(s):  
Huixian Wu ◽  
Arthur Chiang ◽  
David Le ◽  
Win Pratchayakun
Keyword(s):  
Failure Analysis ◽  
Copper Wire ◽  
New Technology ◽  
Analytical Techniques ◽  
Wire Bonding ◽  
Bonding Process ◽  
Wire Bonds ◽  
Copper Wire Bonding ◽  
Wet Chemical ◽  
Microelectronic Components

Abstract With gold prices steadily going up in recent years, copper wire has gained popularity as a means to reduce cost of manufacturing microelectronic components. Performance tradeoff aside, there is an urgent need to thoroughly study the new technology to allay any fear of reliability compromise. Evaluation and optimization of copper wire bonding process is critical. In this paper, novel failure analysis and analytical techniques are applied to the evaluation of copper wire bonding process. Several FA/analytical techniques and FA procedures will be discussed in detail, including novel laser/chemical/plasma decapsulation, FIB, wet chemical etching, reactive ion etching (RIE), cross-section, CSAM, SEM, EDS, and a combination of these techniques. Two case studies will be given to demonstrate the use of these techniques in copper wire bonded devices.

Decapsulation Techniques for Cu Wire Bonding Package

2009 ◽  
Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon
Keyword(s):  
Laser Ablation ◽  
Thin Layer ◽  
Chemical Etching ◽  
Wire Bonding ◽  
Methods And Techniques ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Reliability Issue ◽  
Etch Time ◽  
Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

BGA and Advanced Package Wire to Wire Bonding for Backside Emission Microscopy

1999 ◽  
Author(s):  
Jim B. Colvin
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Wire Bonding ◽  
Preparation Technique ◽  
Low Profile ◽  
Normal Test ◽  
Silicon Thickness ◽  
Working Distance ◽  
Polished Side ◽  
Analytical Tools

Abstract A new method of preparation will be shown which allows traditional fixturing such as test heads and probe stations to be utilized in a normal test mode. No inverted boards cabled to a tester are needed since the die remains in its original package and is polished and rebonded to a new package carrier with the polished side facing upward. A simple pin reassignment is all that is needed to correct the reverse wire sequence after wire to wire bonding or wire to frame bonding in the new package frame. The resulting orientation eliminates many of the problems of backside microscopy since the resulting package orientation is now frontside. The low profile as a result of this technique allows short working distance objectives such as immersion lenses to be used across the die surface. Test equipment can be used in conjunction with analytical tools such as the emission microscope or focused ion beam due to the upright orientation of the polished backside silicon. The relationship between silicon thickness and transmission for various wavelengths of light will be shown. This preparation technique is applicable to advanced packaging methods and has the potential to become part of future assembly processes.

Concept, design and verification of components for an integrated on-detector silicon photonic multichannel transmitter

2019 ◽  
Author(s):  
Yunlong Zhang ◽  
Djorn Karnick ◽  
Marc Schneider ◽  
Lars Eisenblätter ◽  
Thomas Kühner ◽  
...  
Keyword(s):  
Concept Design ◽  
Silicon Photonic
Sign in / Sign up

Export Citation Format

Share Document