scholarly journals Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform

2019 ◽  
Vol 44 (23) ◽  
pp. 5679 ◽  
Author(s):  
Yi Sun ◽  
Walter Shin ◽  
David Arto Laleyan ◽  
Ping Wang ◽  
Ayush Pandey ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Single Crystal ◽  
Microring Resonators

Ultra-High-Q Microring Resonators using Single Crystal Aluminum Nitride on Sapphire Platform

2019 ◽  
Author(s):  
Yi Sun ◽  
David Laleyan ◽  
Eric Reid ◽  
Ping Wang ◽  
Xianhe Liu ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Single Crystal ◽  
Microring Resonators ◽  
High Q

Demonstration of green and UV wavelength high Q aluminum nitride on sapphire microring resonators integrated with microheaters

2021 ◽  
Vol 118 (21) ◽  
pp. 211103
Author(s):  
Walter Shin ◽  
Yi Sun ◽  
Mohammad Soltani ◽  
Zetian Mi
Keyword(s):  
Aluminum Nitride ◽  
Microring Resonators ◽  
High Q

Preparation and Characterization of Single-crystal Aluminum Nitride Substrates

1999 ◽  
Vol 595 ◽  
Author(s):  
Leo J. Schowalter ◽  
J. Carlos Rojo ◽  
Nikolai Yakolev ◽  
Yuriy Shusterman ◽  
Katherine Dovidenko ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Single Crystal ◽  
Convergent Beam Electron Diffraction ◽  
Large Single Crystal ◽  
High Quality ◽  
Afm Imaging ◽  
Convergent Beam ◽  
Edge Dislocations ◽  
Etching Effect

AbstractLarge (up to 10mm diameter) aluminum nitride (AlN) boules have been grown by the sublimation-recondensation method to study the preparation of high-quality single crystal substrates. The growth mechanism of the boules has been studied using AFM. It has been determined that large single crystal grains in those boules grow with a density of screw dislocations below 5×104 cm−3 while edge dislocations are at lower density (none were observed). High-quality AlN single crystal substrates for epitaxial growth have been prepared and characterized using Chemical Mechanical Polishing (CMP) and AFM imaging, respectively. Also, the differential etching effect of KOH solutions on the N and Al-terminated faces of AlN on vicinal c-faces has been investigated. In order to identify the N or Al-terminated face, convergent beam electron diffraction has been used.

scholarly journals Nuclear Radiation Tolerance of Single Crystal Aluminum Nitride Ultrasonic Transducer

2015 ◽  
Vol 70 ◽  
pp. 609-613 ◽  
Author(s):  
Brian Reinhard ◽  
Bernhard R. Tittmann ◽  
Andrew Suprock
Keyword(s):  
Aluminum Nitride ◽  
Single Crystal ◽  
Ultrasonic Transducer ◽  
Nuclear Radiation ◽  
Radiation Tolerance

High-Q Resonators on Single Crystal Aluminum Nitride Grown by Molecular Beam Epitaxy

2019 ◽  
Author(s):  
Yi Sun ◽  
David Laleyan ◽  
Eric Reid ◽  
Ping Wang ◽  
Xianhe Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Single Crystal ◽  
Molecular Beam ◽  
High Q
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