scholarly journals Nuclear Radiation Tolerance of Single Crystal Aluminum Nitride Ultrasonic Transducer

2015 ◽  
Vol 70 ◽  
pp. 609-613 ◽  
Author(s):  
Brian Reinhard ◽  
Bernhard R. Tittmann ◽  
Andrew Suprock
Keyword(s):  
Aluminum Nitride ◽  
Single Crystal ◽  
Ultrasonic Transducer ◽  
Nuclear Radiation ◽  
Radiation Tolerance

High-frequency PIN–PMN–PT single crystal ultrasonic transducer for imaging applications

2012 ◽  
Vol 108 (4) ◽  
pp. 987-991 ◽  
Author(s):  
Y. Chen ◽  
K. H. Lam ◽  
D. Zhou ◽  
W. F. Cheng ◽  
J. Y. Dai ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Frequency ◽  
Ultrasonic Transducer

Ultra-High-Q Microring Resonators using Single Crystal Aluminum Nitride on Sapphire Platform

2019 ◽  
Author(s):  
Yi Sun ◽  
David Laleyan ◽  
Eric Reid ◽  
Ping Wang ◽  
Xianhe Liu ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Single Crystal ◽  
Microring Resonators ◽  
High Q

Preparation and Characterization of Single-crystal Aluminum Nitride Substrates

1999 ◽  
Vol 595 ◽  
Author(s):  
Leo J. Schowalter ◽  
J. Carlos Rojo ◽  
Nikolai Yakolev ◽  
Yuriy Shusterman ◽  
Katherine Dovidenko ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Single Crystal ◽  
Convergent Beam Electron Diffraction ◽  
Large Single Crystal ◽  
High Quality ◽  
Afm Imaging ◽  
Convergent Beam ◽  
Edge Dislocations ◽  
Etching Effect

AbstractLarge (up to 10mm diameter) aluminum nitride (AlN) boules have been grown by the sublimation-recondensation method to study the preparation of high-quality single crystal substrates. The growth mechanism of the boules has been studied using AFM. It has been determined that large single crystal grains in those boules grow with a density of screw dislocations below 5×104 cm−3 while edge dislocations are at lower density (none were observed). High-quality AlN single crystal substrates for epitaxial growth have been prepared and characterized using Chemical Mechanical Polishing (CMP) and AFM imaging, respectively. Also, the differential etching effect of KOH solutions on the N and Al-terminated faces of AlN on vicinal c-faces has been investigated. In order to identify the N or Al-terminated face, convergent beam electron diffraction has been used.

Relaxor‐based single‐crystal materials for ultrasonic transducer applications

1997 ◽  
Vol 101 (5) ◽  
pp. 3094-3094 ◽  
Author(s):  
Thomas R. Shrout ◽  
Seung‐Eek Park ◽  
Patrick D. Lopath ◽  
Kirk K. Shung
Keyword(s):  
Single Crystal ◽  
Ultrasonic Transducer
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