scholarly journals Utilizing multilayer structures to enhance terahertz characterization of thin films ranging from aqueous solutions to histology slides

2019 ◽  
Vol 44 (9) ◽  
pp. 2149 ◽  
Author(s):  
Qiushuo Sun ◽  
Kai Liu ◽  
Xuequan Chen ◽  
Xudong Liu ◽  
A. I. Hernandez-Serrano ◽  
...  
Keyword(s):  
Thin Films ◽  
Aqueous Solutions ◽  
Multilayer Structures

scholarly journals Structural Characterization of Thin Films and Multilayer Structures

1996 ◽  
Vol 06 (C3) ◽  
pp. C3-265-C3-270 ◽  
Author(s):  
K. Temst ◽  
M. J. Van Bael ◽  
M. Baert ◽  
E. Rosseel ◽  
V. Bruyndoncx ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Multilayer Structures

Characterization of SnO2 thin films grown from aqueous solutions

2000 ◽  
Vol 371 (1-2) ◽  
pp. 1-9 ◽  
Author(s):  
Sitthisuntorn Supothina ◽  
Mark R. De Guire
Keyword(s):  
Thin Films ◽  
Aqueous Solutions ◽  
Sno2 Thin Films

Synthesis and characterization of TiO2 thin films on organic self-assembled monolayers: Part I. Film formation from aqueous solutions

1995 ◽  
Vol 10 (3) ◽  
pp. 692-698 ◽  
Author(s):  
H. Shin ◽  
R.J. Collins ◽  
M.R. De Guire ◽  
A.H. Heuer ◽  
C.N. Sukenik
Keyword(s):  
Thin Films ◽  
Aqueous Solutions ◽  
Structural Integrity ◽  
Film Formation ◽  
Self Assembled Monolayers ◽  
Tio2 Thin Films ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Hydrolysis Of

Self-assembled monolayers (SAMs) bearing sulfonate (-SO3H) surface functional groups, on single-crystal Si wafers, were used as substrates for the deposition of TiO2 thin films from aqueous solutions. Polycrystalline TiO2 thin films over 50 nm thick formed in 2 h by hydrolysis of TiCl4 in aqueous HCI solutions at 80 °C. The films were pore-free, showed excellent adherence and uniformity, and consisted of anatase crystallites 2–4 nm in diameter. Annealing at temperatures up to 600 °C caused coarsening of the anatase grains, but no loss of adherence or structural integrity.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Deposition and Characterization of Al2O3 and BiFeO3 Thin Films on Titanium Substrates for Tough MEMS Devices

2017 ◽  
Vol 137 (1) ◽  
pp. 46-47
Author(s):  
Takeshi Kohno ◽  
Masato Mihara ◽  
Ataru Tanabe ◽  
Takashi Abe ◽  
Masanori Okuyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Mems Devices ◽  
Titanium Substrates
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