Temperature-dependent characteristics of GeSn/Ge multiple-quantum-well photodetectors on silicon

2021 ◽  
Author(s):  
Guo-En Chang ◽  
Kuan-Chih Lin ◽  
Po-Rei Huang ◽  
Hui Li ◽  
Henry Cheng
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Temperature Dependent

PHOTOCONDUCTIVITY, PHOTOREFLECTANCE AND PHOTOLUMINESCENCE OF GaAs-AlAs MULTIPLE QUANTUM WELLS

1985 ◽  
Vol 56 ◽  
Author(s):  
H. NEFF ◽  
K. J. BACHMANN ◽  
W. D. LAIDIG
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Heavy Hole ◽  
Multiple Quantum Well ◽  
Light Hole ◽  
Multiple Quantum ◽  
Indirect Transition ◽  
Temperature Dependent ◽  
Direct Inter ◽  
Phonon Absorption

AbstractEmploying temperature dependent photoconductivity, photoluminescence and photoreflectivity measurements, we have analyzed a GaAs-AlAs multiple quantum well. The above optical techniques clearly resolve the fundamental inter-subband transitions, including heavy hole-light hole splittings. At T < 60K an anomalously high photoconductivity was discovered below the direct inter-subband transitions and is attributed tentatively to the presence of extrinsic interface states within the bandgap. For T > l00K the fundamental indirect transition was discovered and associated with LO (L) - phonon absorption.

Carrier Escape Time and Temperature-Dependent Carrier Collection Efficiency of Tunneling-Enhanced Multiple Quantum Well Solar Cells

2014 ◽  
Vol 4 (2) ◽  
pp. 607-613 ◽  
Author(s):  
Kasidit Toprasertpong ◽  
Hiromasa Fujii ◽  
Yunpeng Wang ◽  
Kentaroh Watanabe ◽  
Masakazu Sugiyama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Collection Efficiency ◽  
Multiple Quantum Well ◽  
Escape Time ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Carrier Collection ◽  
Carrier Escape
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