Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes

2003 ◽  
Vol 82 (21) ◽  
pp. 3614-3616 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
L. B. Rowland ◽  
C. H. Yan ◽  
H. Liu
Keyword(s):  
Quantum Well ◽  
Emission Intensity ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Energy Shift ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Light Emitting

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer

2003 ◽  
Vol 42 (Part 2, No. 3A) ◽  
pp. L226-L228 ◽  
Author(s):  
Baijun Zhang ◽  
Takashi Egawa ◽  
Hiroyasu Ishikawa ◽  
Yang Liu ◽  
Takashi Jimbo
Keyword(s):  
Quantum Well ◽  
Buffer Layer ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Algan Buffer

Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells

2010 ◽  
Vol 43 (35) ◽  
pp. 354004 ◽  
Author(s):  
Sang-Heon Han ◽  
Dong-Yul Lee ◽  
Hyun-Wook Shim ◽  
Gwon-Chul Kim ◽  
Young Sun Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Efficiency Droop ◽  
Multiple Quantum ◽  
Light Emitting

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2 (100) substrates

2010 ◽  
Vol 207 (6) ◽  
pp. 1404-1406 ◽  
Author(s):  
Bin Liu ◽  
Ping Han ◽  
Zili Xie ◽  
Rong Zhang ◽  
Chengxiang Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting
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