scholarly journals Optically induced hybrid Bose-Fermi system in quantum wells with different charge carriers

2021 ◽  
Author(s):  
Oleg Kibis ◽  
Maxim Boev ◽  
Vadim Kovalev
Keyword(s):  
Quantum Wells ◽  
Fermi System ◽  
Charge Carriers ◽  
Optically Induced

Stimulated emission, photoluminescence, and localisation of nonequilibrium charge carriers in ultrathin (monolayer) GaN/AlN quantum wells

2019 ◽  
Vol 49 (6) ◽  
pp. 535-539
Author(s):  
E V Lutsenko ◽  
M V Rzheutski ◽  
A V Nagorny ◽  
A V Danilchyk ◽  
D V Nechaev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Charge Carriers ◽  
Nonequilibrium Charge Carriers

Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies

2012 ◽  
Vol 46 (8) ◽  
pp. 998-1002 ◽  
Author(s):  
E. A. Shevchenko ◽  
V. N. Jmerik ◽  
A. M. Mizerov ◽  
A. A. Sitnikova ◽  
S. V. Ivanov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Charge Carriers ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Localization Of Charge Carriers

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

2016 ◽  
Vol 50 (12) ◽  
pp. 1604-1608
Author(s):  
A. N. Yablonsky ◽  
R. Kh. Zhukavin ◽  
N. A. Bekin ◽  
A. V. Novikov ◽  
D. V. Yurasov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Charge Carriers ◽  
Double Quantum

scholarly journals Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells

2021 ◽  
Vol 3 (8) ◽  
Author(s):  
Evgeny R. Burmistrov ◽  
Lev P. Avakyants ◽  
Marina M. Afanasova
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Electron Gas ◽  
Charge Carriers ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
The Matrix ◽  
Dimensional Electron Gas ◽  
Total Electric Field

AbstractThe article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in an InGaN/AlGaN/ GaN heterostructures with one filled quantum-confinement subband. The aim of the article is to create a mathematical model that can be used to estimate the kinetic parameters of a two-dimensional electron gas (2DEG) in the structure under study. The results of the calculation of the matrix scattering potentials demonstrated the reliability and consistency on the used model of industrial LED heterostructures with InGaN/GaN quantum wells. It is shown that mechanical stresses in the InGaN/GaN layers lead to an uneven distribution of the total electric field along the active layer. It has been established that the lifetime limiting the mobility of a two-dimensional electron gas in piezoelectric scattering is of the order of 10–9 s.

Piezoelectric relaxation of a two-dimensional electron gas in heterostructures with InGaN/GaN quantum wells

2021 ◽  
pp. 9-19
Author(s):  
E.R. Burmistrov ◽  
◽  
L.P. Avakyants ◽  
M.M. Afanasova ◽  
◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Electron Gas ◽  
Charge Carriers ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
The Matrix ◽  
Dimensional Electron Gas ◽  
Total Electric Field

The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in an InGaN/AlGaN/ GaN heterostructures with one filled quantum-confinement subband. The aim of the article is to create a mathematical model that can be used to estimate the kinetic parameters of a two-dimensional electron gas (2DEG) in the structure under study. The results of the calculation of the matrix scattering potentials demonstrated the reliability and consistency on the used model of industrial LED heterostructures with InGaN/GaN quantum wells. It is shown that mechanical stresses in the InGaN/GaN layers lead to an uneven distribution of the total electric field along the active layer. It has been established that the lifetime limiting the mobility of a two-dimensional electron gas in piezoelectric scattering is of the order of 10-9 s.

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