Stimulated emission, photoluminescence, and localisation of nonequilibrium charge carriers in ultrathin (monolayer) GaN/AlN quantum wells

2019 ◽  
Vol 49 (6) ◽  
pp. 535-539
Author(s):  
E V Lutsenko ◽  
M V Rzheutski ◽  
A V Nagorny ◽  
A V Danilchyk ◽  
D V Nechaev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Charge Carriers ◽  
Nonequilibrium Charge Carriers

Light Emission Properties of GaN-Based Double Heterostructures and Quantum Wells

1995 ◽  
Vol 395 ◽  
Author(s):  
D.A.S. Loeber ◽  
J.M. Redwing ◽  
N.G. Anderson ◽  
M.A. Tischler
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Stimulated Emission ◽  
Pump Light ◽  
Band Edge Emission ◽  
Emission Characteristics ◽  
Nitrogen Laser ◽  
Edge Emission ◽  
Edge Luminescence ◽  
Double Heterostructures

ABSTRACTEdge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metalorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (∼1 Å) modes which are evenly spaced by 10Å to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.

Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown $a$-Plane GaN

2011 ◽  
Vol 4 (8) ◽  
pp. 082103 ◽  
Author(s):  
Mohamed Lachab ◽  
Krishnan Balakrishnan ◽  
Bin Zhang ◽  
Joe Dion ◽  
Qhalid Fareed ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped

Ultraviolet Stimulated Emission in GaN/AlGaN Multiple Quantum Wells

1998 ◽  
Vol 264-268 ◽  
pp. 1433-1436
Author(s):  
L. Calcagnile ◽  
G. Coli ◽  
D. Rinaldi ◽  
R. Cingolani ◽  
H. Tang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

scholarly journals Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures

2020 ◽  
Vol 49 (4) ◽  
pp. 2326-2331
Author(s):  
Ping Chen ◽  
Young Jae Park ◽  
Yuh-Shiuan Liu ◽  
Theeradetch Detchprohm ◽  
P. Douglas Yoder ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Thermal Effect ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Optimal Growth ◽  
State Density ◽  
Stimulated Emission ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Localized State

AbstractThe thermal effect of the growth temperature on interface morphology and stimulated emission in ultraviolet AlGaN/InGaN multiple quantum wells (MQWs) are experimentally investigated. During the MOCVD epitaxial growth of AlGaN/InGaN MQWs, the ramping rate from a lower temperature for InGaN quantum wells (QWs) to a higher one for AlGaN quantum barriers (QBs) is intentionally changed from 1.0°C/s to 4.0°C/s. Atomic force microscopy images show that the surface morphology of InGaN QWs, which is improved by a thermal effect when the growth temperature rises to the set value of the AlGaN QBs, varies with different temperature ramping rates. The results of stimulated emission indicate that the threshold pumping power density of MQWs is decreased with increasing temperature ramping rate from 1.0°C/s to 3.0°C/s and then slightly increased when the ramping rate is 4.0°C/s. This phenomenon is believed to result from the thermal degradation effect during the temperature ramp step. A long-time high-temperature annealing will reduce the density of indium-rich microstructures as well as the corresponding localized state density, which is assumed to contribute to the radiative recombination in the InGaN QWs. Given the great difference between optimal growth temperatures for AlGaN and InGaN layers, a higher ramping rate would be more appropriate for the growth of ultraviolet AlGaN/InGaN MQWs.

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