C and L band room-temperature continuous-wave InP-based microdisk lasers grown on silicon

2021 ◽  
Author(s):  
Liying Lin ◽  
Ying Xue ◽  
Wei LUO ◽  
Jie LI ◽  
Jie Huang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Microdisk Lasers ◽  
L Band

scholarly journals Room temperature continuous wave operation of injection quantum dot microdisk lasers

2015 ◽  
Vol 643 ◽  
pp. 012002 ◽  
Author(s):  
N V Kryzhanovskaya ◽  
M V Maximov ◽  
A M Nadtochiy ◽  
S A Blokhin ◽  
M A Bobrov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Continuous Wave ◽  
Microdisk Lasers ◽  
Continuous Wave Operation

Continuous wave operation of GaAsBi microdisk lasers at room temperature with large wavelengths ranging from 127 to 141  μm

2019 ◽  
Vol 7 (5) ◽  
pp. 508
Author(s):  
Xiu Liu ◽  
Lijuan Wang ◽  
Xuan Fang ◽  
Taojie Zhou ◽  
Guohong Xiang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Microdisk Lasers ◽  
Continuous Wave Operation

scholarly journals Roadmap of Terahertz Imaging 2021

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4092
Author(s):  
Gintaras Valušis ◽  
Alvydas Lisauskas ◽  
Hui Yuan ◽  
Wojciech Knap ◽  
Hartmut G. Roskos
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Computational Imaging ◽  
Imaging Systems ◽  
Thz Imaging ◽  
Operational Conditions ◽  
Frequency Combs ◽  
Wave Imaging ◽  
On Chip ◽  
Nano Imaging

In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

scholarly journals Compact CH4 sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

2016 ◽  
Vol 108 (1) ◽  
pp. 011106 ◽  
Author(s):  
Lei Dong ◽  
Chunguang Li ◽  
Nancy P. Sanchez ◽  
Aleksander K. Gluszek ◽  
Robert J. Griffin ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Sensor System ◽  
Low Power Consumption ◽  
Interband Cascade Laser

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Organic Chemical ◽  
Blue Laser Diode ◽  
Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

Room temperature continuous wave interband cascade lasers for gas sensing

2012 ◽  
Author(s):  
S. Höfling ◽  
R. Weih ◽  
A. Bauer ◽  
M. Kamp ◽  
A. Forchel
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Gas Sensing ◽  
Interband Cascade Lasers ◽  
Cascade Lasers
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