Continuous cubic phase microplates for generating high-quality Airy beams with strong deflection

2017 ◽  
Vol 42 (13) ◽  
pp. 2483 ◽  
Author(s):  
Ze Cai ◽  
Ya Liu ◽  
Chenchu Zhang ◽  
Jiangchuan Xu ◽  
Shengyun Ji ◽  
...  
Keyword(s):  
2011 ◽  
Vol 50 (36) ◽  
pp. 6627 ◽  
Author(s):  
Jingang Wang ◽  
Jing Bu ◽  
Mingwei Wang ◽  
Yong Yang ◽  
Xiaocong Yuan

2020 ◽  
Vol 69 (1) ◽  
pp. 014205
Author(s):  
Yi-Fan Zhu ◽  
Tao Geng

1999 ◽  
Vol 4 (S1) ◽  
pp. 239-243
Author(s):  
J.B. Li ◽  
Hui Yang ◽  
L.X. Zheng ◽  
D.P. Xu ◽  
Y.T. Wang

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.


2002 ◽  
Vol 74 (3) ◽  
pp. 489-492 ◽  
Author(s):  
P. Ziemann ◽  
H.-G. Boyen ◽  
N. Deyneka ◽  
P. Widmayer ◽  
F. Banhart

A recently developed procedure is reviewed allowing thick (>1 mm), high-quality c-BN films (>80 % c-BN) to be grown. It is based on the observation that compressive stress inevitably present in such films can be released by medium-energy (some hundred keV) ion irradiation without destroying the cubic phase.


Author(s):  
Jingsong Li ◽  
Ming Liu ◽  
Yuejin Zhao ◽  
Liquan Dong ◽  
Lingqin Kong ◽  
...  

Author(s):  
Vadim Cherezov ◽  
Michael A. Hanson ◽  
Mark T. Griffith ◽  
Mark C. Hilgart ◽  
Ruslan Sanishvili ◽  
...  

Crystallization of human membrane proteins in lipidic cubic phase often results in very small but highly ordered crystals. Advent of the sub-10 µm minibeam at the APS GM/CA CAT has enabled the collection of high quality diffraction data from such microcrystals. Herein we describe the challenges and solutions related to growing, manipulating and collecting data from optically invisible microcrystals embedded in an opaque frozen in meso material. Of critical importance is the use of the intense and small synchrotron beam to raster through and locate the crystal sample in an efficient and reliable manner. The resulting diffraction patterns have a significant reduction in background, with strong intensity and improvement in diffraction resolution compared with larger beam sizes. Three high-resolution structures of human G protein-coupled receptors serve as evidence of the utility of these techniques that will likely be useful for future structural determination efforts. We anticipate that further innovations of the technologies applied to microcrystallography will enable the solving of structures of ever more challenging targets.


2011 ◽  
Vol 99 (26) ◽  
pp. 261106 ◽  
Author(s):  
Rui Cao ◽  
Yong Yang ◽  
Jingang Wang ◽  
Jing Bu ◽  
Mingwei Wang ◽  
...  

2012 ◽  
Vol 51 (28) ◽  
pp. 6726 ◽  
Author(s):  
Xiao-Zhang Wang ◽  
Qi Li ◽  
Qi Wang

2014 ◽  
Vol 04 (01) ◽  
pp. 1450001 ◽  
Author(s):  
Jun Luo ◽  
Shujun Zhang ◽  
Wesley Hackenberger ◽  
Thomas R. Shrout

In this work, crystal growth and characterization of PIN–PMN–PT (29–59% PIN and 28–35% PT) were conducted to understand how PIN ratio in the PIN–PMN–PT system impacts its phase stability during crystallization. High-quality PIN–PMN–PT crystals with 36% PIN were obtained using the self-seeded Bridgman process, even though the cubic phase In 2 O 3 formed at the very beginning of solidification. The melt became more unstable when the PIN ratio in the PIN–PMN–PT system increased to 49% and above, which affected the composition and quality of the as-grown crystals significantly. By increasing the PIN to 36% in PIN–PMN–PT crystal, the rhombohedral-to-tetragonal phase transition temperatures and the coercive field reached 115–135°C and 4.5~5.6 kV/cm, respectively, that greatly expanded the operation domains compared to PMN–PT crystals.


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