High-quality hybrid imaging with a cubic phase mask

Author(s):  
Jingsong Li ◽  
Ming Liu ◽  
Yuejin Zhao ◽  
Liquan Dong ◽  
Lingqin Kong ◽  
...  
2010 ◽  
Vol 18 (8) ◽  
pp. 8207 ◽  
Author(s):  
Mads Demenikov ◽  
Andrew R. Harvey

1999 ◽  
Vol 4 (S1) ◽  
pp. 239-243
Author(s):  
J.B. Li ◽  
Hui Yang ◽  
L.X. Zheng ◽  
D.P. Xu ◽  
Y.T. Wang

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.


2002 ◽  
Vol 74 (3) ◽  
pp. 489-492 ◽  
Author(s):  
P. Ziemann ◽  
H.-G. Boyen ◽  
N. Deyneka ◽  
P. Widmayer ◽  
F. Banhart

A recently developed procedure is reviewed allowing thick (>1 mm), high-quality c-BN films (>80 % c-BN) to be grown. It is based on the observation that compressive stress inevitably present in such films can be released by medium-energy (some hundred keV) ion irradiation without destroying the cubic phase.


2011 ◽  
Vol 50 (36) ◽  
pp. 6627 ◽  
Author(s):  
Jingang Wang ◽  
Jing Bu ◽  
Mingwei Wang ◽  
Yong Yang ◽  
Xiaocong Yuan

2016 ◽  
Vol 55 (25) ◽  
pp. 7009 ◽  
Author(s):  
Yijian Wu ◽  
Liquan Dong ◽  
Yuejin Zhao ◽  
Ming Liu ◽  
Xuhong Chu ◽  
...  

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