Ultrafast laser-inscribed nanogratings in sapphire for geometric phase elements

2020 ◽  
Author(s):  
Shuai Xu ◽  
Hua Fan ◽  
Zhen-Ze Li ◽  
Jian-Guan Hua ◽  
Yan-Hao Yu ◽  
...  
Keyword(s):  
Geometric Phase ◽  
Ultrafast Laser

scholarly journals Ultralow-loss geometric phase and polarization shaping by ultrafast laser writing in silica glass

2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Masaaki Sakakura ◽  
Yuhao Lei ◽  
Lei Wang ◽  
Yan-Hao Yu ◽  
Peter G. Kazansky
Keyword(s):  
Silica Glass ◽  
Geometric Phase ◽  
Ultrafast Laser ◽  
Laser Writing

scholarly journals Ultrafast Laser-Induced Metasurfaces for Geometric Phase Manipulation

2016 ◽  
Vol 5 (1) ◽  
pp. 1600575 ◽  
Author(s):  
Rokas Drevinskas ◽  
Martynas Beresna ◽  
Jingyu Zhang ◽  
Andrey G. Kazanskii ◽  
Peter G. Kazansky
Keyword(s):  
Geometric Phase ◽  
Ultrafast Laser ◽  
Phase Manipulation

Ultrafast laser processing of ceramics: Comprehensive survey of laser parameters

2021 ◽  
Vol 33 (1) ◽  
pp. 012009
Author(s):  
Aiko Narazaki ◽  
Hideyuki Takada ◽  
Dai Yoshitomi ◽  
Kenji Torizuka ◽  
Yohei Kobayashi
Keyword(s):  
Laser Processing ◽  
Ultrafast Laser ◽  
Laser Parameters ◽  
Comprehensive Survey

Local Lattice Strain Measurement Using Geometric Phase Analysis of Dark Field Images from Scanning Transmission Electron Microscopy

2011 ◽  
Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg
Keyword(s):  
Phase Analysis ◽  
Geometric Phase ◽  
Process Development ◽  
Local Strain ◽  
Strain Engineering ◽  
Dark Field ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Geometric Phase Analysis ◽  
Scanning Transmission

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.

Progress in ultrafast laser space-selective welding

2020 ◽  
Vol 13 (6) ◽  
pp. 1-15
Author(s):  
ZHANG Guo-dong ◽  
◽  
CHENG Guang-hua ◽  
ZHANG Wei ◽  
Keyword(s):  
Ultrafast Laser

From Semiconductor to Metal in a Flash: Observing Ultrafast Laser-Induced Phase Transformations

1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur
Keyword(s):  
Phase Transformations ◽  
Dielectric Function ◽  
Spectral Range ◽  
Laser Excitation ◽  
Spectroscopic Technique ◽  
Ultrafast Laser ◽  
Lattice Heating ◽  
Fs Laser

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.

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