scholarly journals Ultrafast Laser-Induced Metasurfaces for Geometric Phase Manipulation

2016 ◽  
Vol 5 (1) ◽  
pp. 1600575 ◽  
Author(s):  
Rokas Drevinskas ◽  
Martynas Beresna ◽  
Jingyu Zhang ◽  
Andrey G. Kazanskii ◽  
Peter G. Kazansky
2020 ◽  
Author(s):  
Shuai Xu ◽  
Hua Fan ◽  
Zhen-Ze Li ◽  
Jian-Guan Hua ◽  
Yan-Hao Yu ◽  
...  

2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Masaaki Sakakura ◽  
Yuhao Lei ◽  
Lei Wang ◽  
Yan-Hao Yu ◽  
Peter G. Kazansky

Nano Letters ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 6585-6591 ◽  
Author(s):  
Bernhard Reineke ◽  
Basudeb Sain ◽  
Ruizhe Zhao ◽  
Luca Carletti ◽  
Bingyi Liu ◽  
...  

2021 ◽  
Author(s):  
Shang-Da Jiang ◽  
Shen Zhou ◽  
Jiayue Yuan ◽  
Zi-Yu Wang ◽  
Kun Ling ◽  
...  

2021 ◽  
Vol 33 (1) ◽  
pp. 012009
Author(s):  
Aiko Narazaki ◽  
Hideyuki Takada ◽  
Dai Yoshitomi ◽  
Kenji Torizuka ◽  
Yohei Kobayashi

Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.


2020 ◽  
Vol 13 (6) ◽  
pp. 1-15
Author(s):  
ZHANG Guo-dong ◽  
◽  
CHENG Guang-hua ◽  
ZHANG Wei ◽  
Keyword(s):  

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