Modification of two-photon excited fluorescence from quantum dots on SiN photonic crystals

2010 ◽  
Vol 35 (3) ◽  
pp. 309 ◽  
Author(s):  
Xingsheng Xu ◽  
Toshiki Yamada ◽  
Shiyoshi Yokoyama
Keyword(s):  
Quantum Dots ◽  
Photonic Crystals ◽  
Two Photon

Two-photon excited fluorescence from CdSe quantum dots on SiN photonic crystals

2009 ◽  
Vol 95 (22) ◽  
pp. 221113 ◽  
Author(s):  
Xingsheng Xu ◽  
Toshiki Yamada ◽  
Rieko Ueda ◽  
Akira Otomo
Keyword(s):  
Quantum Dots ◽  
Photonic Crystals ◽  
Cdse Quantum Dots ◽  
Two Photon

Luminescent Photonic Crystals with Extreme‐UV Bandgaps Made of CuInSe 2 Quantum Dots

2021 ◽  
pp. 2000757
Author(s):  
Qiqi Wang ◽  
Hongxia Li ◽  
Weina Cui ◽  
Huaixiu Xu ◽  
Jiyang Fan
Keyword(s):  
Quantum Dots ◽  
Photonic Crystals ◽  
Extreme Uv

scholarly journals Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 930
Author(s):  
Xiaoying Huang ◽  
Rongbin Su ◽  
Jiawei Yang ◽  
Mujie Rao ◽  
Jin Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Single Photon ◽  
Growth Parameters ◽  
Life Time ◽  
Correlation Factor ◽  
Low Density ◽  
Wafer Scale ◽  
Two Photon ◽  
Gaas Quantum Dot ◽  
Highly Uniform

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of μ0.96/μm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3± 0.08 GHz, the second-order correlation factor g2(τ)=0.0322 ±0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.

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