Quantum-well intermixing for the control of second-order nonlinear effects in AlGaAs multiple-quantum-well waveguides

1997 ◽  
Vol 22 (21) ◽  
pp. 1600 ◽  
Author(s):  
M. W. Street ◽  
N. D. Whitbread ◽  
D. C. Hutchings ◽  
J. M. Arnold ◽  
J. H. Marsh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Nonlinear Effects ◽  
Second Order ◽  
Multiple Quantum ◽  
Quantum Well Intermixing

Modification of the second-order optical nonlinearities in AlGaAs asymmetric multiple quantum well waveguides by quantum well intermixing

1997 ◽  
Vol 70 (21) ◽  
pp. 2804-2806 ◽  
Author(s):  
M. W. Street ◽  
N. D. Whitbread ◽  
C. J. Hamilton ◽  
B. Vögele ◽  
C. R. Stanley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Second Order ◽  
Multiple Quantum ◽  
Optical Nonlinearities ◽  
Quantum Well Intermixing

Linearized multiple-quantum-well electro-absorption modulator by quantum well intermixing technique

2001 ◽  
Author(s):  
Won Jun Choi ◽  
Woon S. Kim ◽  
Il Ki Han ◽  
Yong Ju Park ◽  
Eun K. Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Intermixing

Spectral Response Modification Of Quantum Well Infrared Photodetector By Quantum Well Intermixing

2002 ◽  
Vol 744 ◽  
Author(s):  
J. C. Shin ◽  
W. J. Choi ◽  
I. K. Han ◽  
Y. J. Park ◽  
J. I. Lee ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spectral Response ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Ir Absorption ◽  
Infrared Photodetector ◽  
Quantum Well Intermixing ◽  
Absorption Region ◽  
Quantum Well Infrared Photodetector ◽  
Si Doped

ABSTRACTWe have studied the change of the spectral response in a quantum well infrared photodetector (QWIP) by using the impurity-free vacancy disordering (IFVD) to change the bandgap of the GaAs/AlGaAs multiple quantum well absorption layer. IFVD process has been carried out with PECVD-grown SiO2 capping on the MOCVD-grown QWIP structure, whose absorption region consists of 25 periods of 3.6nm thick Si-doped GaAs well and 50nm thick Al0.24Ga0.76As barrier. The PL peak of MQW decreased with the increase of annealing temperature and time from 802 nm to 700 nm at 15 K. The fabricated QWIP whose absorption region was intermixed at 850 °C by IFVD technique showed the maximum change in spectral response from 8 to 10 um when compared to a QWIP without intermixing. This result implies that the intermixing technology can be used to make multicolor QWIP without growing multiple IR absorption regions.

Modulation of the second-order nonlinear tensor components in multiple-quantum-well structures

1998 ◽  
Vol 4 (4) ◽  
pp. 695-700 ◽  
Author(s):  
J.S. Aitchison ◽  
M.W. Street ◽  
N.D. Whitbread ◽  
D.C. Hutchings ◽  
J.H. Marsh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Second Order ◽  
Multiple Quantum ◽  
Quantum Well Structures

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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