Linearized multiple-quantum-well electro-absorption modulator by quantum well intermixing technique

2001 ◽  
Author(s):  
Won Jun Choi ◽  
Woon S. Kim ◽  
Il Ki Han ◽  
Yong Ju Park ◽  
Eun K. Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Intermixing

Quantum-well intermixing for the control of second-order nonlinear effects in AlGaAs multiple-quantum-well waveguides

1997 ◽  
Vol 22 (21) ◽  
pp. 1600 ◽  
Author(s):  
M. W. Street ◽  
N. D. Whitbread ◽  
D. C. Hutchings ◽  
J. M. Arnold ◽  
J. H. Marsh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Nonlinear Effects ◽  
Second Order ◽  
Multiple Quantum ◽  
Quantum Well Intermixing

Spectral Response Modification Of Quantum Well Infrared Photodetector By Quantum Well Intermixing

2002 ◽  
Vol 744 ◽  
Author(s):  
J. C. Shin ◽  
W. J. Choi ◽  
I. K. Han ◽  
Y. J. Park ◽  
J. I. Lee ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spectral Response ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Ir Absorption ◽  
Infrared Photodetector ◽  
Quantum Well Intermixing ◽  
Absorption Region ◽  
Quantum Well Infrared Photodetector ◽  
Si Doped

ABSTRACTWe have studied the change of the spectral response in a quantum well infrared photodetector (QWIP) by using the impurity-free vacancy disordering (IFVD) to change the bandgap of the GaAs/AlGaAs multiple quantum well absorption layer. IFVD process has been carried out with PECVD-grown SiO2 capping on the MOCVD-grown QWIP structure, whose absorption region consists of 25 periods of 3.6nm thick Si-doped GaAs well and 50nm thick Al0.24Ga0.76As barrier. The PL peak of MQW decreased with the increase of annealing temperature and time from 802 nm to 700 nm at 15 K. The fabricated QWIP whose absorption region was intermixed at 850 °C by IFVD technique showed the maximum change in spectral response from 8 to 10 um when compared to a QWIP without intermixing. This result implies that the intermixing technology can be used to make multicolor QWIP without growing multiple IR absorption regions.

Modification of the second-order optical nonlinearities in AlGaAs asymmetric multiple quantum well waveguides by quantum well intermixing

1997 ◽  
Vol 70 (21) ◽  
pp. 2804-2806 ◽  
Author(s):  
M. W. Street ◽  
N. D. Whitbread ◽  
C. J. Hamilton ◽  
B. Vögele ◽  
C. R. Stanley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Second Order ◽  
Multiple Quantum ◽  
Optical Nonlinearities ◽  
Quantum Well Intermixing

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation
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