Local thickness correction of nanometer thin films by means of ion beam etching

2002 ◽  
Author(s):  
Thomas Haensel ◽  
A. Nickel ◽  
H.J. Thomas ◽  
A. Schindler
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Thickness Correction

Smoothing of polycrystalline Cu(In,Ga)(Se,S)2 thin films by low-energy ion-beam etching

1999 ◽  
Vol 17 (3) ◽  
pp. 793-798 ◽  
Author(s):  
F. Frost ◽  
G. Lippold ◽  
K. Otte ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Etching

Electrical end-point detection during ion beam etching of thin films and multilayers

1995 ◽  
Vol 8 (8) ◽  
pp. 676-679 ◽  
Author(s):  
A Matthes ◽  
F Schmidl ◽  
K -U Barholz ◽  
F Elschner ◽  
H Schneidewind ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
End Point ◽  
End Point Detection ◽  
Point Detection

Electro-optic Mach-Zehnder modulators with polycrystalline BaTiO3 thin films on MgO

2002 ◽  
Vol 748 ◽  
Author(s):  
A. Petraru ◽  
J. Schubert ◽  
M. Schmid ◽  
O. Trithaveesak ◽  
Ch. Buchal
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Ion Beam ◽  
Growth Conditions ◽  
Propagation Loss ◽  
Ion Beam Etching ◽  
Waveguide Propagation ◽  
Electro Optic ◽  
Ridge Waveguides ◽  
Waveguide Modulators

ABSTRACTThe optical and electro-optical properties of epitaxially grown thin films of ferroelectric BaTiO3 on MgO substrates have been established and high quality Mach-Zehnder waveguide modulators have been demonstrated. As a next step towards the integration of ferroelectric thin films on different substrates, we have modified the growth conditions by lowering the growth temperature to study polycrystalline, but still highly transparent BaTiO3 (BTO) films. Polycrystalline BTO on MgO substrates has been grown by pulsed laser deposition (PLD). The growth temperature was reduced from 800 °C to 400 °C at an oxygen pressure of 2×10-3 mbar. Although polycrystalline, the BTO is still birefringent with no= 2.32 and ne = 2.30. Ridge waveguides have been formed by ion beam etching. The estimated waveguide propagation loss is 4 dB/cm at 633 nm. Electro-optic Mach-Zehnder modulators have been realized. Using 3 mm long electrodes with a spacing of 10 μm, a Vπ voltage of 14 V was obtained at 633 nm wavelength. This is half of the observed effective electro-optic coefficient measured at epitaxial BTO films. At 1.5 μm wavelength similar results were observed.

A FED PROTOTYPE USING PATTERNED DLC THIN FILMS AS THE CATHODE

2002 ◽  
Vol 16 (06n07) ◽  
pp. 993-997 ◽  
Author(s):  
W. LI ◽  
T. FENG ◽  
D. S. MAO ◽  
X. WANG ◽  
X. H. LIU ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrophoretic Deposition ◽  
Ion Beam ◽  
Broad Band ◽  
Ion Beam Etching ◽  
Glass Slides ◽  
Bluish Green ◽  
Ito Glass ◽  
Titanium Thin Films ◽  
Arc Deposition

In our study, diamond-like-carbon (DLC) thin films were prepared by filtered arc deposition (FAD), which provided a way to deposit DLC thin films on large areas at room temperature. Glass slides coated 100nm chromium or titanium thin films were used as cathode substrates. Millions of rectangular holes with sizes of 5 × 5μm were made on the DLC films using a routine patterning process. Here a special reactive ion beam etching method was applied to etch the DLC films. The anodes of the devices were made by electrophoretic deposition. ZnO:Zn phosphor (P15) was employed, which has a broad band bluish green (centered at 490nm). Before electrophoretic deposition, the anode substrates (ITO glass slides) had been patterned into 50 anode electrodes. In order to improve the adherence of phosphor layers, the as-deposited screens were treated in Na2SiO3 solution for 24h to add additional binder. A kind of matrix-addressed diode FED prototype was designed and packaged. 50-100μm-thick glass slides were used as spacers and getters were applied to maintain the vacuum after the exhaustion. The applied DC voltage was ranged in 0-3000V and much higher current density was measured in the cathode-patterned prototypes than the unpatterned ones during the test. As a result, characters could be well displayed.

Influence of the Microstructure and of an Ion Beam Etching on the Domain Propagation in PZT Thin Films

2002 ◽  
Vol 50 (1) ◽  
pp. 231-240 ◽  
Author(s):  
B. Gautier ◽  
C. Soyer ◽  
E. Cattan ◽  
D. Remiens ◽  
J.-Ci. Labrune
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Pzt Thin Films

Processing Effects on the Contact Resistance of Ion Beam Sputtered Silver on Highly Oriented C-Axis and A-Axis YBCO Films

1992 ◽  
Vol 275 ◽  
Author(s):  
M. Narbutovskih ◽  
J. Rosner ◽  
P. Merchant ◽  
R. D. Jacowitz
Keyword(s):  
Thin Films ◽  
Contact Resistance ◽  
Ion Beam ◽  
Substrate Surface ◽  
Amorphous Layer ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Ion Beam Etching ◽  
X Ray ◽  
Processing Effects

ABSTRACTThis paper reports on the processes used to achieve low resistance silver contacts to YBCO thin films that have either c-axis or a-axis orientation. Characterization by x-ray diffraction and TEM verified that these films are highly oriented with either the a or the c axis oriented perpendicular to the substrate surface. TEM examination of some of the Ag/YBCO interfaces reveals the presence of an amorphous layer. We will describe the effects of ion beam etching and RTA alloying on the contact resistivity for both orientations.

Surface Fluorination of Polyimide Thin Films by CF4 + O2 Reactive Ion Beam Etching

1986 ◽  
Vol 75 ◽  
Author(s):  
William E. Vanderlinde ◽  
Arthur L. Ruoff
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Atom Concentration ◽  
Oxygen Ion ◽  
Theoretical Predictions ◽  
Ion Current Density ◽  
Surface Fluorination ◽  
Reactive Ion Beam Etching

AbstractSurface fluorination of polyimide thin films during CF4 + O2 reactive ion beam etching (RIBE) was investigated. The removal of the fluorinated layer by a subsequent oxygen ion beam etch was also studied. Electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering spectrometry (RBS) detected a fluorinated surface layer on the order of 100 A thick. Fluorine atom concentration in the surface of the film (as measured by RBS) and the etch rate of the film were measured as a function of several experimental parameters: ion energy, ion current density, etch time, and gas composition. The results are compared with theoretical predictions of the total number of fluorine atoms retained in the film after etching.

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