Band-Structure Approach to Synthesis of Grating Couplers with Ultra-High Coupling Efficiency and Directivity

2015 ◽  
Author(s):  
Jelena Notaros ◽  
Miloš A. Popović
Keyword(s):  
Band Structure ◽  
Coupling Efficiency ◽  
Structure Approach ◽  
Grating Couplers

scholarly journals Optimising apodized grating couplers in a pure SOI platform to −05 dB coupling efficiency

2015 ◽  
Vol 23 (12) ◽  
pp. 16289 ◽  
Author(s):  
Angelo Bozzola ◽  
Lee Carroll ◽  
Dario Gerace ◽  
Ilaria Cristiani ◽  
Lucio Claudio Andreani
Keyword(s):  
Coupling Efficiency ◽  
Grating Couplers

scholarly journals Breaking the Coupling Efficiency–Bandwidth Trade‐Off in Surface Grating Couplers Using Zero‐Order Radiation

2021 ◽  
pp. 2000542
Author(s):  
Alejandro Sánchez‐Postigo ◽  
Robert Halir ◽  
J. Gonzalo Wangüemert‐Pérez ◽  
Alejandro Ortega‐Moñux ◽  
Shurui Wang ◽  
...  
Keyword(s):  
Coupling Efficiency ◽  
Zero Order ◽  
Grating Couplers ◽  
Trade Off ◽  
Surface Grating

scholarly journals Broadband High-Efficiency Grating Couplers for Perfectly Vertical Fiber-to-Chip Coupling Enhanced by Fabry-Perot-like Cavity

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 859
Author(s):  
Zan Zhang ◽  
Beiju Huang ◽  
Zanyun Zhang ◽  
Chuantong Cheng ◽  
Bing Bai ◽  
...  
Keyword(s):  
High Efficiency ◽  
Coupling Efficiency ◽  
Light Sources ◽  
Feature Size ◽  
Grating Couplers ◽  
Fabrication Cost ◽  
Fabry Perot ◽  
Dimensional Parameters ◽  
Minimum Feature Size ◽  
Deep Uv

We propose a broadband high-efficiency grating coupler for perfectly vertical fiber-to-chip coupling. The up-reflection is reduced, hence enhanced coupling efficiency is achieved with the help of a Fabry-Perot-like cavity composed of a silicon nitride reflector and the grating itself. With the theory of the Fabry-Perot cavity, the dimensional parameters of the coupler are investigated. With the optimized parameters, up-reflection in the C-band is reduced from 10.6% to 5%, resulting in an enhanced coupling efficiency of 80.3%, with a 1-dB bandwidth of 58 nm, which covers the entire C-band. The minimum feature size of the proposed structure is over 219 nm, which makes our design easy to fabricate through 248 nm deep-UV lithography, and lowers the fabrication cost. The proposed design has potential in efficient and fabrication-tolerant interfacing applications, between off-chip light sources and integrated chips that can be mass-produced.

HYBRIDIZATION EFFECTS IN SOME UTSi (2:1:3; 1:1:1; 2:3:1) COMPOUNDS

2003 ◽  
Vol 17 (24) ◽  
pp. 1277-1282 ◽  
Author(s):  
ILEANA LUPSA ◽  
MIHAELA VALEANU
Keyword(s):  
Magnetic Properties ◽  
Band Structure ◽  
Magnetic Moments ◽  
Transition Element ◽  
Magnetic Ordering ◽  
Critical Energy ◽  
Band Width ◽  
Structure Approach ◽  
Atomic Orbitals ◽  
Dominant Influence

The presence of magnetic moments in uranium atoms in some of U 2 TSi 3, UTSi and U 2 T 3 Si ( T is a 3d, 4d or 5d transition element) compounds is discussed in terms of the hybridization of s, p, d and f atomic orbitals. The hybridization strength in these ternary series of isostructural compounds was calculated using the semiquantitative band structure approach of Straub and Harrison. The prediction criterion for the presence of magnetic ordering, comparing the band width with a critical energy, seems to hold. The dominant influence of fd hybridization effects in the change of magnetic properties inside an isostructural group is in evidence.

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