Ga0.47In0.53As/InP heterophotodiode with reduced dark current and high quantum efficiency

1981 ◽  
Author(s):  
T. P. Pearsall
Keyword(s):  
Quantum Efficiency ◽  
Dark Current ◽  
High Quantum Efficiency ◽  
High Quantum

InAs/GaSb Type II superlattice barrier devices with a low dark current and a high-quantum efficiency

2014 ◽  
Author(s):  
P. C. Klipstein ◽  
E. Avnon ◽  
Y. Benny ◽  
R. Fraenkel ◽  
A. Glozman ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Dark Current ◽  
Type Ii ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Type Ii Superlattice

scholarly journals All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

2010 ◽  
Vol 96 (10) ◽  
pp. 101103 ◽  
Author(s):  
Takasumi Tanabe ◽  
Hisashi Sumikura ◽  
Hideaki Taniyama ◽  
Akihiko Shinya ◽  
Masaya Notomi
Keyword(s):  
Quantum Efficiency ◽  
Dark Current ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
On Chip

Modulation of optical properties of ZnS QDs embedded glasses through aluminum and manganese doping

2021 ◽  
Author(s):  
Kai Li ◽  
Ying Ye ◽  
Wenchao Zhang ◽  
Yuzhou Hu ◽  
Ying Yang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Efficiency ◽  
High Quantum Efficiency ◽  
Information Display ◽  
Manganese Doping ◽  
High Quantum

Nontoxic cadmium-free ZnS and ZnSe QDs QDs with high quantum efficiency have drawn considerable attention for information display. Applications of ZnS and ZnSe QDs are limited by their short emission...

scholarly journals Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 428
Author(s):  
Reza Masoudian Saadabad ◽  
Christian Pauly ◽  
Norbert Herschbach ◽  
Dragomir N. Neshev ◽  
Haroldo T. Hattori ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Speed ◽  
Near Infrared ◽  
Infrared Detector ◽  
High Quantum Efficiency ◽  
Fast Detection ◽  
High Quantum ◽  
Resonant Modes ◽  
Infrared Wavelengths ◽  
Dielectric Metasurface

Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel, a high-speed photodetector with a bandwidth of 65 GHz has been achieved. At the same time, high quantum efficiency for near-infrared illumination can be obtained by the engineering of optical resonant modes to localize optical energy inside the intrinsic Ge disks. Furthermore, small junction capacitance and the possibility of zero/low bias operation have been shown. Our results show that all-dielectric metasurfaces can improve the performance of photodetectors.

A novel high quantum efficiency SiGe Phototransistor detector

2021 ◽  
Author(s):  
Yang Xiang ◽  
Hongyun Xie ◽  
Yin Sha ◽  
Ruilang Ji ◽  
Fu Zhu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Quantum Efficiency ◽  
High Quantum
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