scholarly journals Evolution of dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LD

2021 ◽  
Author(s):  
Katarzyna Pieniak ◽  
Witold Trzeciakowski ◽  
Grzegorz Muziol ◽  
Anna Kafar ◽  
Marcin Siekacz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emission ◽  
Emission Mechanism ◽  
Quantum Well Width

scholarly journals Dimension control of in situ fabricated CsPbClBr2 nanocrystal films toward efficient blue light-emitting diodes

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Chenhui Wang ◽  
Dengbao Han ◽  
Junhui Wang ◽  
Yingguo Yang ◽  
Xinyue Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Blue Emission ◽  
Light Emitting ◽  
Mixed Ligands ◽  
Dimension Control ◽  
Nanocrystal Films ◽  
Width Distribution ◽  
Quantum Well Width

AbstractIn the field of perovskite light-emitting diodes (PeLEDs), the performance of blue emissive electroluminescence devices lags behind the other counterparts due to the lack of fabrication methodology. Herein, we demonstrate the in situ fabrication of CsPbClBr2 nanocrystal films by using mixed ligands of 2-phenylethanamine bromide (PEABr) and 3,3-diphenylpropylamine bromide (DPPABr). PEABr dominates the formation of quasi-two-dimensional perovskites with small-n domains, while DPPABr induces the formation of large-n domains. Strong blue emission at 470 nm with a photoluminescence quantum yield up to 60% was obtained by mixing the two ligands due to the formation of a narrower quantum-well width distribution. Based on such films, efficient blue PeLEDs with a maximum external quantum efficiency of 8.8% were achieved at 473 nm. Furthermore, we illustrate that the use of dual-ligand with respective tendency of forming small-n and large-n domains is a versatile strategy to achieve narrow quantum-well width distribution for photoluminescence enhancement.

scholarly journals Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission

2003 ◽  
Vol 103 (6) ◽  
pp. 689-694 ◽  
Author(s):  
M. Godlewski ◽  
V.Yu. Ivanov ◽  
E.M. Goldys ◽  
M. Phillips ◽  
T. Böttcher ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emission ◽  
Laser Diodes ◽  
Quantum Well Structures

scholarly journals Внутризонное поглощение излучения дырками в квантовых ямах InAsSb/AlSb и InGaAsP/InP

2018 ◽  
Vol 52 (2) ◽  
pp. 207
Author(s):  
Н.В. Павлов ◽  
Г.Г. Зегря ◽  
А.Г. Зегря ◽  
В.Е. Бугров
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Incident Radiation ◽  
Radiation Absorption ◽  
Hole Density ◽  
Internal Radiation ◽  
Radiation Losses ◽  
Semiconductor Quantum Wells ◽  
Quantum Well Width ◽  
Split Band

AbstractMicroscopic analysis of intraband radiation absorption by holes with their transition to the spin-split band for InAsSb/AlSb and InGaAsP/InP semiconductor quantum wells is performed in the context of the four-band Kane model. The calculation is performed for two incident-radiation polarizations: along the crystal-growth axis and in the quantum-well plane. It is demonstrated that absorption with transition to the discrete spectrum of spin-split holes has a higher intensity than absorption with transitions to the continuous spectrum. The dependences of the intraband absorption coefficient on temperature, hole density, and quantum- well width are thoroughly analyzed. It is shown that intraband radiation absorption can be the main mechanism of internal radiation losses in lasers based on quantum wells.

Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs

1989 ◽  
Vol 36 (5) ◽  
pp. 833-838 ◽  
Author(s):  
L.D. Nguyen ◽  
D.C. Radulescu ◽  
M.C. Foisy ◽  
P.J. Tasker ◽  
L.F. Eastman
Keyword(s):  
Quantum Well ◽  
Device Performance ◽  
Quantum Well Width
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