An investigation on the light-emission mechanism of metal-insulator-semiconductor light-emitting diodes with different SiGe quantum well structures

2009 ◽  
Vol 94 (24) ◽  
pp. 241908 ◽  
Author(s):  
Milton M. H. Liao
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Emission Mechanism ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Quantum Well Structures

Comparison of light emission in InGaN/GaN light-emitting diodes with graded, triangular, and parabolic quantum-well structures

2012 ◽  
Vol 60 (3) ◽  
pp. 505-508 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Yong-Tae Moon ◽  
Dae-Seob Han ◽  
Joong Seo Park ◽  
Myeong-Seok Oh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Light Emitting ◽  
Quantum Well Structures

SiGe Quantum Well Metal-Insulator-Semiconductor Light-Emitting Diodes

2012 ◽  
Author(s):  
M. H. Liao ◽  
C. H. Chen ◽  
L. C. Chang ◽  
C. Yang ◽  
S. C. Kao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting

Influence of the quantum-well shape on the light emission characteristics of InGaN/GaN quantum-well structures and light-emitting diodes

2002 ◽  
Vol 81 (19) ◽  
pp. 3552-3554 ◽  
Author(s):  
H. W. Shim ◽  
R. J. Choi ◽  
S. M. Jeong ◽  
Le Van Vinh ◽  
C.-H. Hong ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Emission Characteristics ◽  
Light Emitting ◽  
Quantum Well Structures

Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors

2008 ◽  
Vol 103 (1) ◽  
pp. 016103 ◽  
Author(s):  
T.-H. Cheng ◽  
M. H. Liao ◽  
Lingyen Yeh ◽  
T.-L. Lee ◽  
M.-S. Liang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Digital Communication ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting

Optical Performance Characteristics of Light-Emitting Diodes Designed with Dip-Shaped InGaN/GaN Quantum well Structures

2013 ◽  
Vol 328 ◽  
pp. 845-849
Author(s):  
Seong Jun Kim ◽  
Chel Jong Choi ◽  
Hyun Soo Kim
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Spatial Separation ◽  
Wave Functions ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Lower Temperature

A dip-shaped InGaN/GaN quantum well (QW) structure was computed to design efficient light-emitting diodes (LEDs). The advanced LEDs designed with the dip-shaped QW structures exhibited higher internal quantum efficiency by 26 % and the lower temperature-driven efficiency droop as compared to the reference LEDs. This could be due to the enhanced radiative recombination rate in the QW active region, which is associated with the reduced spatial separation of electron-hole wave functions.

Full-color light-emitting diodes from ZnCdMgSe/ZnCdSe quantum well structures grown on InP substrates

2000 ◽  
Vol 214-215 ◽  
pp. 1058-1063 ◽  
Author(s):  
M.C Tamargo ◽  
W Lin ◽  
S.P Guo ◽  
Y Guo ◽  
Y Luo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Full Color ◽  
Inp Substrates
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