scholarly journals Concentric Tubes Silicon-based Metamaterial Structure for Mid-IR Broadband Absorption

2021 ◽  
Author(s):  
Mahmoud Abouelatta ◽  
Muhammad Othman ◽  
MAI DESOUKY ◽  
Ahmed Mahmoud ◽  
Mohamed Swillam
Keyword(s):  
Metamaterial Structure ◽  
Broadband Absorption ◽  
Silicon Based

scholarly journals Review of Polarization Optical Devices Based on Graphene Materials

2020 ◽  
Vol 21 (5) ◽  
pp. 1608 ◽  
Author(s):  
Shijie Zhang ◽  
Zongwen Li ◽  
Fei Xing
Keyword(s):  
Response Spectrum ◽  
Optical Devices ◽  
Polarization Dependence ◽  
Research Progress ◽  
Absorption Enhancement ◽  
Broadband Absorption ◽  
Polarization Characteristics ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Silicon Based

Graphene has received extensive scholarly attention for its extraordinary optical, electrical, and physicochemical properties, as well as its compatibility with silicon-based semiconductor processes. As a unique two-dimensional atomic crystal material, graphene has excellent mechanical properties, ultra-high carrier mobility, ultra-wide optical response spectrum, and strong polarization dependence effect, which make it have great potential in new optical and polarization devices. A series of new optical devices that are based on graphene have been developed, showing excellent performance and broad application prospects. In this paper, the recent research progress of polarizers, sensors, modulators, and detectors that are based on the polarization characteristics of graphene is reviewed. In particular, the polarization dependence effect and broadband absorption enhancement of graphene under total reflection structure are emphasized, which enhance the interaction between graphene and light and then provide a new direction for research of graphene polarization devices.

scholarly journals Near-Infrared Schottky Silicon Photodetectors Based on Two Dimensional Materials

2021 ◽  
Author(s):  
Teresa Crisci ◽  
Luigi Moretti ◽  
Mariano Gioffrè ◽  
Maurizio Casalino
Keyword(s):  
Near Infrared ◽  
2D Materials ◽  
Active Material ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Broadband Absorption ◽  
Two Dimensional Materials ◽  
High Carrier Mobility ◽  
Light Matter Interaction ◽  
Silicon Based

Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D materials can be transferred on many substrates, including silicon, opening the path to the development of Schottky junctions to be used for the infrared detection. Although Schottky near-infrared silicon photodetectors based on metals are not a new concept in literature the employment of two-dimensional materials instead of metals is relatively new and it is leading to silicon-based photodetectors with unprecedented performance in the infrared regime. This chapter aims, first to elucidate the physical effect and the working principles of these devices, then to describe the main structures reported in literature, finally to discuss the most significant results obtained in recent years.

Deposition of ternary silicon based compounds by CVD techniques

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  
Silicon Based

CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley
Keyword(s):  
Corrosion Protection ◽  
Silicon Based

Metamaterial Structure with Negative μ and ε for reduction of return loss of Microstrip Patch Antenna

2012 ◽  
Vol 2 (8) ◽  
pp. 130-133
Author(s):  
Amandeep Singh Amandeep Singh ◽  
◽  
Sankul Agarwal ◽  
Vaibhav Sharma ◽  
Shivam Pandita
Keyword(s):  
Patch Antenna ◽  
Return Loss ◽  
Microstrip Patch Antenna ◽  
Metamaterial Structure ◽  
Microstrip Patch

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe
Keyword(s):  
Charge Transfer ◽  
Chemical Modification ◽  
Electronic Transport ◽  
Hole Transport ◽  
Electron Acceptors ◽  
Oxygen Atmosphere ◽  
Dangling Bonds ◽  
Silicon Based ◽  
Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

Low Power Pixel-Level ADC Readout Circuit for an Amorphous Silicon-Based Microbolometer

2009 ◽  
Vol E92-C (5) ◽  
pp. 708-712
Author(s):  
Dong-Heon HA ◽  
Chi Ho HWANG ◽  
Yong Soo LEE ◽  
Hee Chul LEE
Keyword(s):  
Low Power ◽  
Amorphous Silicon ◽  
Readout Circuit ◽  
Silicon Based
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